Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles M. V. BadylevichI. V. BlokhinM. Yu. Tolotaev Electronic and Optical Properties of Semiconductors Pages: 1375 - 1377
Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals M. M. MezdroginaV. V. KrivolapchukA. V. Cherenkov Electronic and Optical Properties of Semiconductors Pages: 1378 - 1385
Dispersion and instability of drift waves in a fine-layered semiconductor structure A. A. BulgakovO. V. Shramkova Semiconductor Structures, Interfaces, and Surfaces Pages: 1386 - 1392
Properties of the GaSb epitaxial layers obtained by the MOCVD method R. V. LevinA. S. VlasovV. M. Andreev Semiconductor Structures, Interfaces, and Surfaces Pages: 1393 - 1397
A study of n +-6H/n-3C/p +-6H-SiC heterostructures grown by sublimation epitaxy A. A. LebedevA. M. Strel’chukS. Nishino Semiconductor Structures, Interfaces, and Surfaces Pages: 1398 - 1401
Electric-field effect on the spin-dependent resonance tunneling P. S. AlekseevV. M. ChistyakovI. N. Yassievich Low-Dimensional Systems Pages: 1402 - 1408
Specific features of 2D electron distribution over the subbands of the quantum well of a single heavily doped heterojunction V. I. Kadushkin Low-Dimensional Systems Pages: 1409 - 1414
Light-induced metal-insulator transition in n-GaAs/AlGaAs heterostructure: Acoustic methods of study I. L. DrichkoA. M. D’yakonovA. I. Toropov Low-Dimensional Systems Pages: 1415 - 1422
Atomic and electronic structure of the silicon and silicon-metal Si20, Si 20 − , NaSi20, KSi20 nanoparticles N. A. BorshchN. S. PereslavtsevaS. I. Kurganskiĭ Low-Dimensional Systems Pages: 1423 - 1428
The effect of a quantizing electric field on the transverse mobility of electrons in a superlattice D. V. Zav’yalovS. V. KryuchkovN. E. Meshcheryakova Low-Dimensional Systems Pages: 1429 - 1431
Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells V. V. ChaldyshevA. S. Shkol’nikT. Holden Low-Dimensional Systems Pages: 1432 - 1435
Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases V. I. BalyubaV. Yu. GritsykL. S. Khludkova Physics of Semiconductor Devices Pages: 1436 - 1441
Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells A. Sh. AbdinovN. M. MekhtievS. I. Amirova Physics of Semiconductor Devices Pages: 1442 - 1444
The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures G. B. GalievI. S. Vasil’evskiĭA. A. Cherechukin Physics of Semiconductor Devices Pages: 1445 - 1449