Nature of a temperature hysteresis of effective shear modulus in single-crystal silicon A. V. Oleinich-LysyukB. I. GutsulyakI. M. Fodchuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 735 - 737
Phonon scattering, thermoelectric power, and thermal conductivity control in a semiconductor-metal eutectic composition G. I. Isakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 738 - 741
The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions O. V. AleksandrovA. O. Zakhar’inN. A. Sobolev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 742 - 747
Stresses in selectively oxidized GaAs/(AlGa)xOy structures S. A. BlokhinA. N. SmirnovV. M. Ustinov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 748 - 753
Low-temperature instabilities of the electrical properties of Cd0.96Zn0.04Te:Cl semi-insulating crystals A. V. SavitskiiO. A. ParfenyukN. D. Vakhnyak Electronic and Optical Properties of Semiconductors Pages: 754 - 758
Polarized infrared and Raman spectroscopy studies of the liquid crystal E7 alignment in composites based on grooved silicon E. V. AstrovaT. S. PerovaJ. K. Vij Electronic and Optical Properties of Semiconductors Pages: 759 - 767
Hydrogen-containing donors in silicon: Centers with negative effective correlation energy Yu. M. PokotiloA. N. PetukhV. G. Tsvyrko Electronic and Optical Properties of Semiconductors Pages: 768 - 771
Weak ferromagnetism in InSe:Mn layered crystals V. V. Slyn’koA. G. KhandozhkoW. D. Dobrowolski Electronic and Optical Properties of Semiconductors Pages: 772 - 776
Dispersion of the refractive index in Tl1−x CuxGaSe2 (0 ≤ x ≤ 0.02) and Tl1−x CuxInS2 (0 ≤ x ≤ 0.015) crystals A. N. GeorgobianiA. Kh. MatievB. M. Khamkhoev Electronic and Optical Properties of Semiconductors Pages: 777 - 779
The effect of neutron irradiation on the properties of n-InSb whisker microcrystals I. A. BolshakovaV. M. BoikoD. I. Merkurisov Electronic and Optical Properties of Semiconductors Pages: 780 - 785
The electrooptic effect and anisotropy of the refractive index in Tl1−x CuxGaSe2 (0 ≤ x ≤ 0.02) crystals A. N. GeorgobianiA. Kh. MatievB. M. Khamkhoev Electronic and Optical Properties of Semiconductors Pages: 786 - 788
Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese M. K. BakhadyrkhanovO. É. SattarovTuérdi Umaier Electronic and Optical Properties of Semiconductors Pages: 789 - 791
Specific features of the physical properties of a modified CdTe surface V. P. Makhniy Semiconductor Structures, Interfaces, and Surfaces Pages: 792 - 794
The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes N. I. BochkarevaE. A. ZhirnovYu. G. Shreter Semiconductor Structures, Interfaces, and Surfaces Pages: 795 - 799
The properties of structures based on oxidized porous silicon under the effect of illumination and a gas environment D. I. BilenkoO. Ya. BelobrovayaE. I. Khasina Semiconductor Structures, Interfaces, and Surfaces Pages: 800 - 804
Optical transitions in a quantized cylindrical layer in the presence of a homogeneous electric field V. A. ArutyunyanS. L. ArutyunyanG. Sh. Petrosyan Low-Dimensional Systems Pages: 805 - 810
Nonohmic quasi-2D hopping conductance and the kinetics of its relaxation B. A. AronzonD. Yu. Kovalev2 V. V. Ryl’kov Low-Dimensional Systems Pages: 811 - 819
The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system Yu. G. MusikhinG. E. CirlinV. M. Ustinov Low-Dimensional Systems Pages: 820 - 825
Resonance modulation of electron-electron relaxation by a quantizing magnetic field V. I. Kadushkin Low-Dimensional Systems Pages: 826 - 829
A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy V. A. TerekhovE. I. TerukovÉ. P. Domashevskaya Amorphous, Vitreous, and Porous Semiconductors Pages: 830 - 834
Optical and electrical properties of thin wafers fabricated from nanocrystalline silicon powder N. N. KononovG. P. Kuz’minO. V. Tikhonevich Amorphous, Vitreous, and Porous Semiconductors Pages: 835 - 839
Magnetic properties of iron-modified amorphous carbon S. G. YastrebovV. I. Ivanov-OmskiiJ. Voiron Amorphous, Vitreous, and Porous Semiconductors Pages: 840 - 844
Photosensitive properties and a mechanism for photogeneration of charge carriers in polymeric layers containing organometallic complexes E. L. AleksandrovaM. Ya. GoikhmanV. V. Kudryavtsev Amorphous, Vitreous, and Porous Semiconductors Pages: 845 - 850
High-power flip-chip blue light-emitting diodes based on AlGaInN D. A. ZakheimI. P. SmirnovaG. V. Itkinson Physics of Semiconductor Devices Pages: 851 - 855
A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure I. E. TitkovI. P. ProninI. V. Grekhov Physics of Semiconductor Devices Pages: 856 - 860