Ab initio studies of the band parameters of III–V and II–VI zinc-blende semiconductors S. Zh. KarazhanovL. C. Lew Yan Voon Electronic and Optical Properties of Semiconductors Pages: 161 - 173
Photoreflection studies of the dopant activation in InP implanted with Be+ ions L. P. AvakyantsP. Yu. BokovA. V. Chervyakov Electronic and Optical Properties of Semiconductors Pages: 174 - 176
The effect of current pulse annealing on the electrical properties of polycrystalline p-Si V. A. GridchinV. M. Lubimskii Electronic and Optical Properties of Semiconductors Pages: 177 - 181
Spectroscopic study of Ga-doped Ge under uniaxial pressure Ya. E. PokrovskiiN. A. Khval’kovskii Electronic and Optical Properties of Semiconductors Pages: 182 - 188
The effect of laser radiation on the formation of oriented cadmium sulfide layers under highly nonequilibrium conditions A. P. BelyaevV. P. RubetsV. V. Antipov Semiconductor Structures, Interfaces, and Surfaces Pages: 189 - 191
Scattering of charge carriers at the boundaries of crystallites in films of polycrystalline silicon V. A. GridchinV. M. LyubimskiiA. G. Moiseev Semiconductor Structures, Interfaces, and Surfaces Pages: 192 - 197
The influence of a nonlinear electromagnetic wave on electric current density in a surface superlattice in a strong electric field D. V. Zav’yalovS. V. KryuchkovN. E. Meshcheryakova Semiconductor Structures, Interfaces, and Surfaces Pages: 198 - 201
Fabrication and photoelectric properties of the ZnO-Cu(In,Ga)Se2 heterojunctions V. F. GremenokG. A. Il’chukYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 202 - 205
The qualitative difference between mechanisms of electroforming in Si-SiO2-W structures based on n-Si and p-Si V. M. MordvintsevS. E. KudryavtsevV. L. Levin Semiconductor Structures, Interfaces, and Surfaces Pages: 206 - 213
Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm N. V. ZotovaS. A. KarandashevN. G. Tarakanova Semiconductor Structures, Interfaces, and Surfaces Pages: 214 - 217
Photovoltaic poperties of n-ZnO:Al/PbPc/p-Si structures G. A. Il’chukS. E. NikitinE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 218 - 220
Nonohmic conductance and mechanisms of energy relaxation in 2D electron gas in GaAs/InGaAs/GaAs heterostructures A. A. SherstobitovG. M. Min’kovB. N. Zvonkov Low-Dimensional Systems Pages: 221 - 225
Special features of the electron-electron interaction in the potential of a heavily doped AlxGa1−x As:Si/GaAs heterojunction V. I. Kadushkin Low-Dimensional Systems Pages: 226 - 230
The effect of thickness fluctuations on the static electrical conductivity of a semiconductor quantum wire M. A. RuvinskiiB. M. Ruvinskii Low-Dimensional Systems Pages: 231 - 234
Selective electron transfer between quantum dots induced by a resonance pulse L. A. OpenovA. V. Tsukanov Low-Dimensional Systems Pages: 235 - 242
Optical properties of porous nanosized GaAs A. I. BelogorokhovS. A. GavrilovA. A. Tikhomirov Low-Dimensional Systems Pages: 243 - 248
Kinetics and inhomogeneous carrier injection in InGaN nanolayers D. S. SizovV. S. SizovN. N. Ledentsov Low-Dimensional Systems Pages: 249 - 253
Electrical characteristics of insulator-conductor and insulator-semiconductor macrosystems V. A. Sotskov Amorphous, Vitreous, and Porous Semiconductors Pages: 254 - 260
On the injection current mechanism in light-emitting p-i-n structures based on a-Si1−x Cx:H hydrogenated amorphous alloys A. A. Andreev Amorphous, Vitreous, and Porous Semiconductors Pages: 261 - 264
A graded-gap photoelectric detector for ionizing radiation L. DapkusK. PoželaV. Jasutis Physics of Semiconductor Devices Pages: 265 - 268
Ammonia sensors based on Pd-n-Si diodes V. I. BalyubaV. Yu. GrisykL. S. Khludkova Physics of Semiconductor Devices Pages: 269 - 272