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Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Multilayer gradient InAs1−x Sbx/…/InAs1−x−y SbxPy/n-InAs structures emitting in a wavelength range of 6 to 9 μm during injection, extraction, and optical pumping were studied.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’ & N. G. Tarakanova

Authors
  1. N. V. Zotova
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  2. S. A. Karandashev
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  3. B. A. Matveev
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  4. M. A. Remennyi
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  5. N. M. Stus’
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  6. N. G. Tarakanova
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 2, 2005, pp. 230–233.

Original Russian Text Copyright © 2005 by Zotova, Karandashev, Matveev, Remenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Stus’, Tarakanova.

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Zotova, N.V., Karandashev, S.A., Matveev, B.A. et al. Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm. Semiconductors 39, 214–217 (2005). https://doi.org/10.1134/1.1864201

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  • DOI: https://doi.org/10.1134/1.1864201

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