A study of recombination centers in irradiated p-Si crystals T. A. Pagava Electronic and Optical Properties of Semiconductors Pages: 639 - 643
Long-wavelength edge of the spectrum of hot electron-hole plasma radiation in photoexcited indium arsenide E. ShatkovskisA. Česnys Electronic and Optical Properties of Semiconductors Pages: 644 - 647
A protrusion in the absorption spectra of GaAs excited by high-power picosecond light pulses G. S. AltybaevI. L. BronevoiS. E. Kumekov Electronic and Optical Properties of Semiconductors Pages: 648 - 651
Photosensitive polyimides containing substituted diphenylmethane fragments in the backbone E. L. AleksandrovaG. I. NosovaV. V. Kudryavtsev Electronic and Optical Properties of Semiconductors Pages: 652 - 656
Analysis of polarization modulation spectra of photopleochroism induced by uniaxial compression in Ge crystals I. E. MatyashB. K. Serdega Electronic and Optical Properties of Semiconductors Pages: 657 - 662
Physical mechanisms of laser correction and stabilization of the parameters of Al-n-n +-Si-Al schottky barrier structures G. I. VorobetsM. M. VorobetsA. G. Shkavro Semiconductor Structures, Interfaces, and Surfaces Pages: 663 - 665
Slow relaxation of conductance of quasi-two-dimensional highly disordered MIS structures A. B. DavydovB. A. Aronzon Semiconductor Structures, Interfaces, and Surfaces Pages: 666 - 671
Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction B. M. AtaevYa. I. AlivovB. A. Magomedov Semiconductor Structures, Interfaces, and Surfaces Pages: 672 - 674
High-frequency barrier capacitance of metal-semiconductor contacts and abrupt p-n junctions V. I. Murygin Semiconductor Structures, Interfaces, and Surfaces Pages: 675 - 677
Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition W. V. LundinA. V. SakharovD. S. Sizov Semiconductor Structures, Interfaces, and Surfaces Pages: 678 - 682
Structural defects at the semiconductor-ferroelectric interface L. S. BermanI. E. Titkov Semiconductor Structures, Interfaces, and Surfaces Pages: 683 - 688
Electron-electron scattering in stepped quantum wells V. L. ZerovaL. E. Vorob’evG. G. Zegrya Low-Dimensional Systems Pages: 689 - 695
Spectroscopy of exciton states of InAs quantum molecules V. G. TalalaevJ. W. TommV. M. Ustinov Low-Dimensional Systems Pages: 696 - 701
Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect I. L. DrichkoA. M. D’yakonovA. I. Toropov Low-Dimensional Systems Pages: 702 - 711
Formation of thick porous silicon layers with insufficient minority carrier concentration D. N. GoryachevL. V. BelyakovO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 712 - 716
Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs E. A. GrebenshchikovaA. N. ImenkovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 717 - 723
Soft breakdown as a cause of current drop in an MOS tunnel structure A. F. ShulekinS. É. TyaginovM. I. Vexler Physics of Semiconductor Devices Pages: 724 - 726
Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range L. Ya. KarachinskyN. Yu. GordeevN. N. Ledentsov Physics of Semiconductor Devices Pages: 727 - 731
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates M. V. MaksimovYu. M. ShernyakovZh. I. Alferov Physics of Semiconductor Devices Pages: 732 - 735