Dependence of dicarbon annealing temperature in n-Si on oxygen concentration in the crystal N. I. BoyarkinaS. A. Smagulova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 495 - 498
Equilibrium characteristics and low-temperature photoluminescence of CdTe:Pb single crystals A. V. SavitskyO. A. ParfenyukS. N. Chupyra Electronic and Optical Properties of Semiconductors Pages: 499 - 504
Electrical properties of layered FeGaInS4 single crystals N. N. Niftiev Electronic and Optical Properties of Semiconductors Pages: 505 - 506
Features of thermal radiation of plane-parallel semiconductor wafers K. Yu. GugaA. G. KollyukhV. I. Pipa Electronic and Optical Properties of Semiconductors Pages: 507 - 511
Nonlinear absorption of light by Zn0.37Cd0.63Se solid solutions A. BaidullaevaA. I. VlasenkoL. F. Shcherbonos Electronic and Optical Properties of Semiconductors Pages: 512 - 513
Mobility of minority charge carriers in p-HgCdTe films V. S. VaravinS. A. DvoretskiiD. Yu. Protasov Electronic and Optical Properties of Semiconductors Pages: 514 - 519
Optical properties of synthetic diamond single crystals A. V. MudryiT. P. LarionovaV. V. Tikhonov Electronic and Optical Properties of Semiconductors Pages: 520 - 523
Phase conjugation on the surface of optically excited ZnO A. N. GruzintsevV. T. Volkov Electronic and Optical Properties of Semiconductors Pages: 524 - 527
Paramagnetic structural defects and conductivity in hydrogenated nanocrystalline carbon-doped silicon films O. I. ShevaleevskiiA. A. TsvetkovK. S. Lim Electronic and Optical Properties of Semiconductors Pages: 528 - 530
Electrical properties of MnIn2Se4 N. N. NiftievM. A. AlidzhanovM. B. Muradov Electronic and Optical Properties of Semiconductors Pages: 531 - 532
Plasmon-phonon-polaritons in p-doped Bi-Sb alloys N. P. Stepanov Electronic and Optical Properties of Semiconductors Pages: 533 - 536
MOCVD growth and Mg-doping of InAs layers T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 537 - 542
Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide K. D. GlinchukN. M. LitovchenkoO. N. Strilchuk Electronic and Optical Properties of Semiconductors Pages: 543 - 545
Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging S. I. DrapakV. B. OrletskiiZ. D. Kovalyuk Semiconductor Structures, Interfaces, and Surfaces Pages: 546 - 549
On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures A. V. SachenkoA. P. Gorban’V. P. Kostylyov Semiconductor Structures, Interfaces, and Surfaces Pages: 550 - 553
Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping V. I. ShashkinA. V. Murel Semiconductor Structures, Interfaces, and Surfaces Pages: 554 - 559
Geometric structure and spectral characteristics of electronic states in silicon nanoparticles S. I. KurganskiiN. A. Borsch Low-Dimensional Systems Pages: 560 - 564
Luminescence of stepped quantum wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures V. F. AgekyanYu. A. StepanovE. Zibik Low-Dimensional Systems Pages: 565 - 571
Properties of self-organized SiGe nanostructures formed by ion implantation Yu. N. ParkhomenkoA. I. BelogorokhovM. G. Lisachenko Low-Dimensional Systems Pages: 572 - 575
Vertical transport of hot electrons in GaAs/AlAs superlattices D. N. MirlinV. F. SapegaV. M. Ustinov Low-Dimensional Systems Pages: 576 - 580
Interaction of infrared radiation with free carriers in mesoporous silicon L. A. OsminkinaE. V. KurepinaP. K. Kashkarov Amorphous, Vitreous, and Porous Semiconductors Pages: 581 - 587
Photoconductivity of polymer compositions with a high content of organic dyes N. A. DavidenkoA. A. IshchenkoR. D. Mysyk Amorphous, Vitreous, and Porous Semiconductors Pages: 588 - 593
Tensoresistive effect in porous silicon layers with different morphology S. P. ZiminA. N. Bragin Amorphous, Vitreous, and Porous Semiconductors Pages: 594 - 597
ESR studies of nanocrystalline silicon films obtained by pulsed laser ablation of silicon targets V. Ya. BratusS. M. OkulovÉ. G. Manoilov Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 602
Specific features of electrical transport in anisotropically nanostructured silicon P. A. ForshL. A. OsminkinaP. K. Kashkarov Amorphous, Vitreous, and Porous Semiconductors Pages: 603 - 606
Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells V. A. OdnoblyudovA. Yu. EgorovV. M. Ustinov Physics of Semiconductor Devices Pages: 607 - 609
Kinetics of electroluminescence in an efficient silicon light-emitting diode with thermally stable spectral characteristics A. M. Emel’yanovYu. A. NikolaevT. M. Mel’nikova Physics of Semiconductor Devices Pages: 610 - 614