Abstract
Variations in the built-in potential of optical contact between n-InSe and p-GaSe in the course of long-term (over 10 years) storage under normal ambient conditions were investigated in the case of n-InSe-p-GaSe heterostructures. It was found that the above potential increases considerably with time. This increase is accounted for by the fact that the surfaces of InSe and GaSe become closer to each other as a result of the diffusive spread of oxygen originally adsorbed at the interface into the bulk of the contacting semiconductors. As a result, InSe/GaSe islands are formed and shunt the structure (regions of real close InSe/GaSe contact are formed).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 5, 2004, pp. 566–569.
Original Russian Text Copyright © 2004 by Drapak, Orletskii, Kovalyuk.
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Drapak, S.I., Orletskii, V.B. & Kovalyuk, Z.D. Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging. Semiconductors 38, 546–549 (2004). https://doi.org/10.1134/1.1755889
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DOI: https://doi.org/10.1134/1.1755889