Determination of the oxygen diffusion profile in polycrystalline lead selenide layers using nuclear microanalysis A. E. GamartsV. M. LebedevD. B. Chesnokova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1160 - 1163
Electronic and structural transitions in Pb1−x GexTe:Ga alloys under pressure E. P. SkipetrovE. A. ZverevaV. E. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 1164 - 1167
Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−X Te layers P. A. BakhtinS. A. DvoretskiiYu. G. Sidorov Electronic and Optical Properties of Semiconductors Pages: 1168 - 1171
Effect of low-temperature annealing on electrical properties of n-HgCdTe P. A. BakhtinS. A. DvoretskiiYu. G. Sidorov Electronic and optical Properties of Semiconductors Pages: 1172 - 1175
Formation and study of buried SiC layers with a high content of radiation defects E. V. BogdanovaV. V. KozlovskiA. A. Lebedev Electronic and optical Properties of Semiconductors Pages: 1176 - 1178
A model of electrical isolation in GaN and ZnO bombarded with light ions A. I. TitovP. A. KarasevS. O. Kucheyev Electronic and Optical Properties of Semiconductors Pages: 1179 - 1186
Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions E. V. KalininaG. F. KholuyanovK. Havancsak Electronic and Optical Properties of Semiconductors Pages: 1187 - 1191
Fabrication and photosensitivity of heterojunctions based on CuIn3Se5 crystals I. V. Bodnar’S. E. NikitinM. V. Yakushev Semiconductor Structures, Interfaces, and Surfaces Pages: 1192 - 1197
Influence of hydrogen sulfide on electrical and photoelectric properties of Al-p-Si-SnO2:Cu-Ag heterostructures S. V. SlobodchikovE. V. RussuKh. M. Salikhov Semiconductor Structures, Interfaces, and Surfaces Pages: 1198 - 1201
Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100) A. A. TonkikhG. E. CirlinP. Werner Low-Dimensional Systems Pages: 1202 - 1206
Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures M. V. MaksimovD. S. SizovD. Bimberg Low-Dimensional Systems Pages: 1207 - 1211
Calculation of the thermoelectric figure of merit for multilayer structures with quantum wells in the case of carrier scattering by polar optical phonons D. A. Pshenai-SeverinYu. I. Ravich Low-Dimensional Systems Pages: 1212 - 1216
Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique A. A. TonkikhG. E. CirlinV. M. Ustinov Low-Dimensional Systems Pages: 1217 - 1220
Distribution of the density of electronic states in the energy gap of microcrystalline hydrogenated silicon A. G. KazanskiiK. Yu. Khabarova Amorphous, Vitreous, and Porous Semiconductors Pages: 1221 - 1224
Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines A. I. YakimovA. V. DvurechenskiiK. S. Zhuravlev Physics of Semiconductor Devices Pages: 1225 - 1229
Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface N. V. ZotovaN. D. Il’inskayaV. V. Shustov Physics of Semiconductor Devices Pages: 1230 - 1234
Microwave field-effect transistors based on group-III nitrides S. B. AleksandrovD. A. BaranovA. A. Chernyavskii Physics of Semiconductor Devices Pages: 1235 - 1239