Paramagnetic defects in silicon carbide crystals irradiated with gamma-ray quanta I. V. IlyinE. N. MokhovP. G. Baranov Electronic and Optical Properties of Semiconductors Pages: 1347 - 1354
Interaction of hydrogen with radiation defects in p-Si crystals O. V. FeklisovaN. A. YarykinJ. Weber Electronic and Optical Properties of Semiconductors Pages: 1355 - 1360
electrical properties of the proton-irradiated semi-insulating GaAs:Cr V. N. BrudnyiA. I. Potapov Electronic and Optical Properties of Semiconductors Pages: 1361 - 1365
Dynamics of nonequilibrium gratings induced in silicon films by femtosecond laser pulses M. F. GalyautdinovV. S. LobkovI. V. Negrashov Electronic and Optical Properties of Semiconductors Pages: 1366 - 1368
Radiative recombination via direct optical transitions in In1 −x GaxAs (0≤x≤0.16) solid solutions M. AidaralievN. V. ZotovaG. N. Talalakin Electronic and Optical Properties of Semiconductors Pages: 1369 - 1371
Effect of structural imperfection on the spectrum of deep levels in 6H-SiC A. A. LebedevD. V. DavydovM. V. Pavlenko Electronic and Optical Properties of Semiconductors Pages: 1372 - 1374
The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype S. Yu. DavydovA. A. LebedevYu. M. Tairov Semiconductor Structures, Interfaces, and Surfaces Pages: 1375 - 1377
Ostwald ripening of quantum-dot nanostructures R. D. VengrenovichYu. V. GudymaS. V. Yarema Low-Dimensional Systems Pages: 1378 - 1382
Kinetics of exciton photoluminescence in low-dimensional silicon structures A. V. SachenkoÉ. B. KaganovichS. V. Svechnikov Low-Dimensional Systems Pages: 1383 - 1389
Renormalization of energy spectrum of quantum dots under vibrational resonance conditions A. V. FedorovA. V. BaranovY. Masumoto Low-Dimensional Systems Pages: 1390 - 1397
Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering T. K. ZvonarevaV. I. Ivanov-OmskiiL. V. Sharonova Amorphous, Vitreous, and Porous Semiconductors Pages: 1398 - 1403
InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range T. N. DanilovaA. N. ImenkovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 1404 - 1417