Abstract
Interaction of hydrogen with radiation defects in p-Si crystals was studied by deep-level transient spectroscopy. Hydrogen was introduced into the electron-irradiated crystals using wet chemical etching in a solution of nitric and hydrofluoric acids at room temperature with subsequent annealing at 380 K under reverse bias applied to the formed Schottky diodes. It is found that the passivation of radiation defects is accompanied with the formation of new electrically active centers with the concentration profile dependent on the hydrogen concentration. It is shown for the first time that hydrogen passivates the electrical activity of the CsCi centers. Based on the data about the spatial distribution of defects and the kinetics of passivation, the plausible origin of the newly formed centers is analyzed. The radii of hydrogen capture by divacancies, the K centers, the CsCi complexes, and new centers were determined.
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References
C. H. Seager, R. A. Anderson, and J. K. G. Panitz, J. Mater. Res. 2(1), 96 (1987).
S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer-Verlag, Berlin, 1992).
J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, et al., Phys. Rev. B 55, 16176 (1997).
J.-U. Sachse, J. Weber, and H. Lemke, Mater. Sci. Forum 258–263, 307 (1997).
E. Ö. Sveinbjörnsson and Ö. Engström, Phys. Rev. B 52, 4884 (1995).
N. Yarykin, J.-U. Sachse, J. Weber, and H. Lemke, Mater. Sci. Forum 258–263, 301 (1997).
K. Irmscher, H. Klose, and K. Maas, J. Phys. C 17, 6317 (1984).
A. Hallen, B. U. R. Sundquist, Z. Paska, et al., J. Appl. Phys. 67, 1266 (1990).
O. Feklisova and N. Yarykin, Semicond. Sci. Technol. 12, 742 (1997).
Y. Tokuda, Jpn. J. Appl. Phys. 37, 1815 (1998).
A. R. Peaker, J. H. Evans-Freeman, P. Y. Y. Kan, et al., Physica B (Amsterdam) 273–274, 243 (1999).
S. Fatima, C. Jagadich, J. Lalita, et al., J. Appl. Phys. 85(5), 2562 (1999).
G. D. Watkins, Radiation Damage in Semiconductors (Dunod, Paris, 1965).
G. D. Watkins, Mater. Res. Soc. Symp. Proc. 469, 139 (1997).
T. Zundel and J. Weber, Phys. Rev. B 39, 13549 (1989).
W. Song, X. D. Zhan, B. W. Benson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990).
P. Leary, R. Jones, and S. Öberg, Phys. Rev. B 57(7), 3887 (1998).
N. Yarykin, J.-U. Sachse, H. Lemke, and J. Weber, Phys. Rev. B 59(8), 5551 (1999).
P. M. Mooney, L. J. Cheng, M. Süli, et al., Phys. Rev. B 15(8), 3836 (1977).
O. Feklisova, N. Yarykin, Eu. Yakimov, and J. Weber, Physica B (Amsterdam) 273–274, 235 (1999).
S. V. Koveshnikov, S. V. Nosenko, and E. B. Yakimov, Fiz. Tekh. Poluprovodn. (Leningrad) 22(5), 922 (1988) [Sov. Phys. Semicond. 22, 581 (1988)].
P. J. Drevinsky, C. E. Caefer, S. P. Tobin, et al., Mater. Res. Soc. Symp. Proc. 104, 167 (1988).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 12, 2001, pp. 1417–1422.
Original Russian Text Copyright © 2001 by Feklisova, Yarykin, Yakimov, Weber.
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Feklisova, O.V., Yarykin, N.A., Yakimov, E.B. et al. Interaction of hydrogen with radiation defects in p-Si crystals. Semiconductors 35, 1355–1360 (2001). https://doi.org/10.1134/1.1427969
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DOI: https://doi.org/10.1134/1.1427969