Interaction between copper and antimony in a solid solution based on germanium with the formation of a charged complex V. M. GlazovA. Ya. Potemkin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 495 - 501
Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures V. P. KuznetsovR. A. Rubtsova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 502 - 509
The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium O. V. AleksandrovA. O. Zakhar’inYu. A. Nikolaev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 510 - 513
Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals K. D. GlinchukN. M. LitovchenkoO. N. Stril’chuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 514 - 516
Effect of diffusion length and surface recombination on the photopleochroism of anisotropic crystals G. A. Medvedkin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 517 - 520
Effect of diffusion length and surface recombination on the polarization quantum efficiency of anisotropic crystals G. A. Medvedkin Electronic and Optical Properties of Semiconductors Pages: 521 - 524
Thermoelectric power of the n-InSb in a transverse quantizing magnetic field at a large temperature gradient M. M. Gadzhialiev Electronic and Optical Properties of Semiconductors Pages: 525 - 526
Influence of annealing on the dislocation-related electrical conductivity of germanium S. A. Shevchenko Electronic and Optical Properties of Semiconductors Pages: 527 - 533
Optical spectroscopy of excitonic states in CuInSe2 A. V. MudryiM. V. YakushevA. I. Patuk Electronic and Optical Properties of Semiconductors Pages: 534 - 537
Effect of uniaxial deformation on electrophysical parameters of 6H-SiC p-n structures A. A. Lebedev Electronic and Optical Properties of Semiconductors Pages: 538 - 540
Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy L. S. BermanV. G. Danil’chenkoF. Yu. Soldatenkov Electronic and Optical Properties of Semiconductors Pages: 541 - 544
Photocapacitance effect in a monopolar metal-insulator-semiconductor capacitor at low temperatures N. A. Penin Semiconductor Structures, Interfaces, and Surfaces Pages: 545 - 549
Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal D. A. UsanovA. V. Skripal’V. E. Orlov Semiconductor Structures, Interfaces, and Surfaces Pages: 550 - 554
Hot carrier electromotive force caused by surface potential modulation in a strong microwave field G. GulyamovM. G. DadamirzaevS. R. Boidedaev Semiconductor Structures, Interfaces, and Surfaces Pages: 555 - 557
Photosensitivity of thin-film structures based on (CuInSe2)x(2ZnSe)1−x solid solutions V. Yu. Rud’Yu. V. Rud’L. V. Rusak Semiconductor Structures, Interfaces, and Surfaces Pages: 558 - 562
Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells V. Ya. AleshkinB. A. AndreevO. A. Kuznetsov Low-Dimensional Systems Pages: 563 - 567
Exciton energy states and photoluminescence spectra of the strained-layer ZnS-ZnSe superlattices N. V. Bondar’V. V. TishchenkoM. S. Brodin Low-Dimensional Systems Pages: 568 - 574
Zero-phonon and dipole Γ-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field V. Ya. AleshkinA. A. Andronov Low-Dimensional Systems Pages: 575 - 582
On the spectra of electrons and holes in an open spherical nanoheterostructure (through the example of GaAs/AlxGa1−x As/GaAs) N. V. TkachV. A. HolovatskyO. N. Voitsekhivska Low-Dimensional Systems Pages: 583 - 588
Study of decay of elastically strained germanium film at the silicon surface I. V. ZakurdaevM. V. BaizerM. M. Rzaev Low-Dimensional Systems Pages: 589 - 593
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range N. A. MaleevA. E. ZhukovD. Bimberg Low-Dimensional Systems Pages: 594 - 597
Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering P. A. IvanovO. I. Kon’kovE. I. Terukov Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 602
Charge-carrier transport in a double-collector magnetotransistor M. A. GlaubermanV. V. KozelA. V. Nakhabin Amorphous, Vitreous, and Porous Semiconductors Pages: 603 - 605
A method for modulation of the charge-carrier mobility in a semiconductor V. V. NovikovR. R. VardanyanÉ. E. Pakhomov Physics of Semiconductor Devices Pages: 606 - 608
Power conversion efficiency of quantum dot laser diodes A. E. ZhukovA. R. KovshD. Bimberg Physics of Semiconductor Devices Pages: 609 - 613