1. Influence of native defects on polytypism in SiC

   • A. A. Lebedev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 707 - 709

2. Antistructural defects in PbTe-type semiconductors

   • V. F. Masterov
   • S. I. Bondarevskii
   • P. P. Seregin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 710 - 711

3. Electrical properties of nuclear-doped indium antimonide

   • N. G. Kolin
   • D. I. Merkurisov
   • S. P. Solov’ev

   Electronic and Optical Properties of Semiconductors Pages: 712 - 715

4. Study of the polarization photoluminescence of thick epitaxial GaN layers

   • Yu. V. Zhilyaev
   • V. V. Krivolapchuk
   • I. N. Safronov

   Electronic and Optical Properties of Semiconductors Pages: 716 - 718

5. Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it

   • T. I. Voronina
   • T. S. Lagunova
   • Yu. P. Yakovlev

   Electronic and Optical Properties of Semiconductors Pages: 719 - 725

6. Hubbard energy of two-electron tin centers in PbS_1−zTe_z solid solutions

   • V. F. Masterov
   • F. S. Nasredinov
   • N. P. Seregin

   Electronic and Optical Properties of Semiconductors Pages: 726 - 727

7. Investigation of MOVPE-grown GaN layers doped with As atoms

   • A. F. Tsatsul’nikov
   • B. Ya. Ber
   • A. Hoffmann

   Electronic and Optical Properties of Semiconductors Pages: 728 - 730

8. Photolectric effects in silicon switching structures utilizing rare-earth fluorides

   • V. A. Rozhkov
   • M. B. Shalimova

   Semiconductors Structures, Interfaces and Surfaces Pages: 731 - 735

9. Fabrication and properties of In₂O₃/CdS/CuInSe₂ heterostructures

   • V. Yu. Rud’
   • Yu. V. Rud’

   Semiconductors Structures, Interfaces and Surfaces Pages: 736 - 739

10. Production and investigation of AgIn₅S₈/(InSe, GaSe) heterojunctions

    • I. V. Bodnar’
    • V. F. Gremenok
    • Yu. V. Rud’

    Semiconductors Structures, Interfaces and Surfaces Pages: 740 - 743

11. Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer

    • V. I. Kozlovskii
    • A. B. Krysa
    • A. G. Tur’yanskii

    Semiconductors Structures, Interfaces and Surfaces Pages: 744 - 748

12. Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light

    • B. I. Reznikov

    Semiconductors Structures, Interfaces and Surfaces Pages: 749 - 756

13. Heterojunctions utilizing CuIn_xGa_1−xTe₂ thin films

    • V. Yu. Rud’
    • Yu. V. Rud’
    • D. D. Krivolap

    Semiconductors Structures, Interfaces and Surfaces Pages: 757 - 760

14. Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields

    • É. P. Sinyavskii
    • S. M. Sokovnich

    Low-Dimensional Systems Pages: 761 - 764

15. Polar state of a particle with a degenerate band spectrum in a quantum dot

    • I. P. Ipatova
    • A. Yu. Maslov
    • O. V. Proshina

    Low-Dimensional Systems Pages: 765 - 770

16. Transport and optical properties of tin δ-doped GaAs structures

    • V. A. Kul’bachinskii
    • V. G. Kytin
    • A. de Visser

    Low-Dimensional Systems Pages: 771 - 778

17. Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures

    • A. M. Georgievskii
    • S. V. Zaitsev
    • P. S. Kop’ev

    Low-Dimensional Systems Pages: 779 - 781

18. Electron-beam-induced conductivity in self-organized silicon quantum wells

    • A. N. Andronov
    • S. V. Robozerov
    • A. M. Malyarenko

    Low-Dimensional Systems Pages: 782 - 787

19. Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host

    • D. A. Vinokurov
    • V. A. Kapitonov
    • Zh. I. Alferov

    Low-Dimensional Systems Pages: 788 - 791

20. Photocapacitance relaxation in amorphous As₂Se₃ films

    • I. A. Vasiliev
    • S. D. Shutov

    Amorphous, Glassy and Porous Semiconductors Pages: 792 - 794

21. Controlling the U ⁻-center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens

    • L. P. Kazakova
    • K. D. Tsendin

    Amorphous, Glassy and Porous Semiconductors Pages: 795 - 798

22. Theory of photoresistors based on trapezoidal δ-doped superlattices

    • V. V. Osipov
    • A. Yu. Selyakov
    • M. Foygel

    The Physics of Semiconductor Devices Pages: 799 - 803

23. A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

    • Yu. A. Goldberg
    • O. V. Konstantinov
    • M. Z. Shvarts

    The Physics of Semiconductor Devices Pages: 804 - 806

24. Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding

    • E. G. Guk
    • B. G. Podlaskin
    • V. A. Kozlov

    The Physics of Semiconductor Devices Pages: 807 - 812

25. Polarization selection in VCSELs due to current carrier heating

    • B. S. Ryvkin
    • A. M. Georgievskii

    The Physics of Semiconductor Devices Pages: 813 - 819