Influence of native defects on polytypism in SiC A. A. Lebedev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 707 - 709
Antistructural defects in PbTe-type semiconductors V. F. MasterovS. I. BondarevskiiP. P. Seregin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 710 - 711
Electrical properties of nuclear-doped indium antimonide N. G. KolinD. I. MerkurisovS. P. Solov’ev Electronic and Optical Properties of Semiconductors Pages: 712 - 715
Study of the polarization photoluminescence of thick epitaxial GaN layers Yu. V. ZhilyaevV. V. KrivolapchukI. N. Safronov Electronic and Optical Properties of Semiconductors Pages: 716 - 718
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 719 - 725
Hubbard energy of two-electron tin centers in PbS1−zTez solid solutions V. F. MasterovF. S. NasredinovN. P. Seregin Electronic and Optical Properties of Semiconductors Pages: 726 - 727
Investigation of MOVPE-grown GaN layers doped with As atoms A. F. Tsatsul’nikovB. Ya. BerA. Hoffmann Electronic and Optical Properties of Semiconductors Pages: 728 - 730
Photolectric effects in silicon switching structures utilizing rare-earth fluorides V. A. RozhkovM. B. Shalimova Semiconductors Structures, Interfaces and Surfaces Pages: 731 - 735
Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures V. Yu. Rud’Yu. V. Rud’ Semiconductors Structures, Interfaces and Surfaces Pages: 736 - 739
Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions I. V. Bodnar’V. F. GremenokYu. V. Rud’ Semiconductors Structures, Interfaces and Surfaces Pages: 740 - 743
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer V. I. KozlovskiiA. B. KrysaA. G. Tur’yanskii Semiconductors Structures, Interfaces and Surfaces Pages: 744 - 748
Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light B. I. Reznikov Semiconductors Structures, Interfaces and Surfaces Pages: 749 - 756
Heterojunctions utilizing CuInxGa1−xTe2 thin films V. Yu. Rud’Yu. V. Rud’D. D. Krivolap Semiconductors Structures, Interfaces and Surfaces Pages: 757 - 760
Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields É. P. SinyavskiiS. M. Sokovnich Low-Dimensional Systems Pages: 761 - 764
Polar state of a particle with a degenerate band spectrum in a quantum dot I. P. IpatovaA. Yu. MaslovO. V. Proshina Low-Dimensional Systems Pages: 765 - 770
Transport and optical properties of tin δ-doped GaAs structures V. A. Kul’bachinskiiV. G. KytinA. de Visser Low-Dimensional Systems Pages: 771 - 778
Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures A. M. GeorgievskiiS. V. ZaitsevP. S. Kop’ev Low-Dimensional Systems Pages: 779 - 781
Electron-beam-induced conductivity in self-organized silicon quantum wells A. N. AndronovS. V. RobozerovA. M. Malyarenko Low-Dimensional Systems Pages: 782 - 787
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host D. A. VinokurovV. A. KapitonovZh. I. Alferov Low-Dimensional Systems Pages: 788 - 791
Photocapacitance relaxation in amorphous As2Se3 films I. A. VasilievS. D. Shutov Amorphous, Glassy and Porous Semiconductors Pages: 792 - 794
Controlling the U −-center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens L. P. KazakovaK. D. Tsendin Amorphous, Glassy and Porous Semiconductors Pages: 795 - 798
Theory of photoresistors based on trapezoidal δ-doped superlattices V. V. OsipovA. Yu. SelyakovM. Foygel The Physics of Semiconductor Devices Pages: 799 - 803
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes Yu. A. GoldbergO. V. KonstantinovM. Z. Shvarts The Physics of Semiconductor Devices Pages: 804 - 806
Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding E. G. GukB. G. PodlaskinV. A. Kozlov The Physics of Semiconductor Devices Pages: 807 - 812
Polarization selection in VCSELs due to current carrier heating B. S. RyvkinA. M. Georgievskii The Physics of Semiconductor Devices Pages: 813 - 819