In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth) Editorial Board of the Journal “Fizika i Tekhnika Poluprovodnikov” Personalia Pages: 799 - 800
Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors A. V. KolobovK. Tanaka Amorphous, Glassy and Porous Semiconductors Pages: 801 - 806
Transport properties of microcrystalline silicon at low temperatures J. -H. ZhouS. D. BaranovskiiK. Tanaka Amorphous, Glassy, and Porous Semiconductors Pages: 807 - 811
Synthesis and properties of Ge-Sb-S: NdCl3 glasses B. FrumarováP. NemecJ. Oswald Amorphous, Glassy, and Porous Semiconductors Pages: 812 - 816
Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors V. M. LyubinM. L. Klebanov Amorphous, Glassy, and Porous Semiconductors Pages: 817 - 823
Recombination in hydrogenated amorphous silicon K. V. KoughiaE. I. TerukovV. Fuhs Amorphous, Glassy, and Porous Semiconductors Pages: 824 - 830
Modification of the electron spectrum and vibrational properties of amorphous carbon by copper doping V. I. Ivanov-OmskiiÉ. A. Smorgonskaya Amorphous, Glassy, and Porous Semiconductors Pages: 831 - 837
Phase transitions occurring in glassy chalcogenide semiconductors induced by electric field or laser pulses É. A. LebedevK. D. Tséndin Amorphous, Glassy, and Porous Semiconductors Pages: 838 - 842
Modeling of hypervalent configurations, valence alternation pairs, deformed structure, and properties of a-S and a-As2S3 S. A. DembovskiiA. S. ZyubinF. V. Grigor’ev Amorphous, Glassy, and Porous Semiconductors Pages: 843 - 849
Toward understanding the photoinduced changes in chalcogenide glasses H. Fritzsche Amorphous, Glassy, and Porous Semiconductors Pages: 850 - 854
Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films P. Nagels Amorphous, Glassy, and Porous Semiconductors Pages: 855 - 860
Photoinduced structural changes in amorphous semiconductors K. Tanaka Amorphous, Glassy, and Porous Semiconductors Pages: 861 - 866
Chalcogenide glasses in optoelectronics A. M. Andriesh Amorphous, Glassy, and Porous Semiconductors Pages: 867 - 872
Copper-induced changes in the properties of arsenic chalcogenides N. BolleéP. HertogenA. Gheorghiu-de La Rocque Amorphous, Glassy, and Porous Semiconductors Pages: 873 - 878
Doping in metal chalcogenide glasses S. A. GirlaniB. YanP. C. Taylor Amorphous, Glassy, and Porous Semiconductors Pages: 879 - 883
Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method E. I. TerukovO. I. Kon’kovG. Weiser Amorphous, Glassy, and Porous Semiconductors Pages: 884 - 885
Ion implantation of porous gallium phosphide V. V. UshakovV. A. DravinV. Yu. Timoshenko Amorphous, Glassy, and Porous Semiconductors Pages: 886 - 890
A model of photoinduced anisotropy in glassy semiconductors E. V. Emel’yanovaV. I. Arkhipov Amorphous, Glassy, and Porous Semiconductors Pages: 891 - 895
Light absorption and photoluminescence of porous silicon A. N. ObraztsovV. A. KaravanskiiH. Watanabe Amorphous, Glassy, and Porous Semiconductors Pages: 896 - 900
Multimode nature and magnetophonon resonance of quaternary solid solutions of zinc, cadmium, and mercury tellurides E. M. SheregiiJ. CebulskiW. Gebicki Amorphous, Glassy, and Porous Semiconductors Pages: 901 - 909
Characteristic features of the interaction of porous silicon with heavy water D. N. GoryachevO. M. SreseliG. Polisskii Amorphous, Glassy, and Porous Semiconductors Pages: 910 - 912
Information for authors submitting papers for publication in the Russian language Editorial Board Amorphous, Glassy, and Porous Semiconductors Pages: 913 - 915
Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 .March 1998] A. N. KabalbinV. B. NeimashV. S. Shtym Erratum Pages: 916 - 916