Abstract
The effect of irradiation by Ar ions and thermal annealing on the properties of porous gallium phosphide (por-GaP) obtained by electrolytic methods is investigated. It is shown on the basis of Raman scattering and photoluminescence data that, in contrast with porous silicon, por-GaP does not have high radiation hardness, and that thermal annealing of defects in layers amorphized by ion implantation is impeded by the absence of a good crystal base for solid-state epitaxial recrystallization processes. Data on radiation-induced defect formation and from probing of the material with a rare-earth “luminescence probe” are consistent with a mesoporous structure of the material.
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Fiz. Tekh. Poluprovodn. 32, 990–994 (August 1998)
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Ushakov, V.V., Dravin, V.A., Mel’nik, N.N. et al. Ion implantation of porous gallium phosphide. Semiconductors 32, 886–890 (1998). https://doi.org/10.1134/1.1187478
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DOI: https://doi.org/10.1134/1.1187478