Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1−x SnxSe alloys E. P. SkipetrovB. B. KovalevE. A. Zvereva Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1257 - 1260
Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon V. V. ArtamanovM. Ya. ValakhV. A. Yukhimchuk Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1261 - 1265
Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon O. V. AleksandrovYu. A. NikolaevN. A. Sobolev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1266 - 1269
Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06 contacts near the metal-insulator transition T. Yu. AllenKh. G. NazhmudinovT. A. Polyanskaya Electronic and Optical Properties of Semiconductors Pages: 1270 - 1276
Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si N. I. BochkarevaA. V. Klochkov Electronic and Optical Properties of Semiconductors Pages: 1277 - 1283
Macroscopic ion traps at the silicon-oxide interface S. G. DmitrievYu. V. Markin Semiconductor Structures, Interfaces and Surfaces Pages: 1284 - 1288
Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface S. G. DmitrievYu. V. Markin Semiconductor Structures, Interfaces and Surfaces Pages: 1289 - 1292
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma followed by low-temperature annealing K. S. ZhuravlevA. L. SokolovK. P. Mogil’nikov Low-Dimensional Systems Pages: 1293 - 1298
Weak localization and intersubband transitions in δ-doped GaAs G. M. Min’kovS. A. NegashevV. L. Gurtovoi Low-Dimensional Systems Pages: 1299 - 1303
Quantum corrections to the conductivity of a two-dimensional system with antidots M. M. MakhmudianM. V. Éntin Low-Dimensional Systems Pages: 1304 - 1308
Transient processes in photocathodes at high laser intensities B. I. ReznikovA. V. Subashiev Physics of Semiconductor Devices Pages: 1309 - 1317
Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions N. M. VolodinA. V. KhanovaL. L. Fedorenko Physics of Semiconductor Devices Pages: 1318 - 1322
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region V. P. EvtikhievI. V. KudryashovZh. I. Alferov Physics of Semiconductor Devices Pages: 1323 - 1327
Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)] I. K. KamilovA. A. StepurenkoA. S. Kovalev Erratum Pages: 1330 - 1330