Diffusion of boron and phosphorus in silicon during high-temperature ion implantation G. V. Gadiyak OriginalPaper Pages: 321 - 325
Effect of electron and neutron bombardment on the orange luminescence spectra of not specially doped and copper-doped cadmium sulfide single crystals G. E. DavidyukV. S. ManzharaV. V. Bulatetskii OriginalPaper Pages: 326 - 328
Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas V. A. SablikovO. A. RyabushkinS. V. Polyakov OriginalPaper Pages: 329 - 334
The electrical conductivity of polycrystalline SnO2(Cu) films and their sensitivity to hydrogen sulfide B. A. AkimovA. V. AlbulM. Labeau OriginalPaper Pages: 335 - 339
Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents I. I. KolkovskiiV. V. Luk’yanitsa OriginalPaper Pages: 340 - 343
Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy N. A. CharykovA. M. LitvakYu. P. Yakovlev OriginalPaper Pages: 344 - 349
Interband magnetooptic absorption line shape in bismuth S. V. BrovkoA. A. ZaitsevO. V. Kondakov OriginalPaper Pages: 350 - 353
Intense photoluminescence of porous layers of SiC films grown on silicon substrates A. M. DanishevskiiV. B. ShumanA. Yu. Rogachev OriginalPaper Pages: 354 - 358
Injection enhancement of photocurrent in polycrystalline silicon p +-n-n + structures R. Aliev OriginalPaper Pages: 359 - 360
Particle scattering times on one-dimensional potential barriers N. L. Chuprikov OriginalPaper Pages: 361 - 365
Transverse stability of an impact-ionization front in a Si p +-n-n + structure A. M. MinarskiiP. B. Rodin OriginalPaper Pages: 366 - 370
Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands A. A. Lebedev OriginalPaper Pages: 371 - 374
Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst-Ettingshausen effect M. K. ZhitinskayaS. A. NemovT. E. Svechnikova OriginalPaper Pages: 375 - 377
Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation A. M. GeorgievskiiV. A. Solov’evA. Ya. Shik OriginalPaper Pages: 378 - 383
Electron localization in sound absorption oscillations in the quantum Hall effect regime I. L. DrichkoA. M. D’yakonovA. V. Suslov OriginalPaper Pages: 384 - 390
Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum Wells A. M. KreshchukS. V. NovikovI. G. Savel’ev OriginalPaper Pages: 391 - 398
Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask L. B. ProéktM. A. KaliteevskiiB. S. Yavich OriginalPaper Pages: 401 - 404
Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 T. Yu. AllenT. A. PolyanskayaA. A. Shakmaev OriginalPaper Pages: 405 - 406
Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer V. D. Kagan OriginalPaper Pages: 407 - 410
Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix A. E. ZhukovA. Yu. EgorovD. Bimberg OriginalPaper Pages: 411 - 414
Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures A. G. DutovV. A. KomarL. A. Smakhtin OriginalPaper Pages: 415 - 417
Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface L. N. VozmilovaV. I. GamanT. P. Smirnova OriginalPaper Pages: 418 - 422
Radiative cooling under the conditions of magnetoconcentration A. I. LiptugaV. K. MalyutenkoL. V. Levash OriginalPaper Pages: 423 - 426
Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W) I. B. ErmolovichV. V. MileninV. L. Gromashevskii OriginalPaper Pages: 427 - 430
Transitory switching-on of microplasmas at subthreshold voltages V. N. Dobrovol’skiiI. E. Pal’tsevA. V. Romanov OriginalPaper Pages: 431 - 432