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Intense photoluminescence of porous layers of SiC films grown on silicon substrates

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Abstract

Luminescing porous layers have been prepared on SiC films grown on silicon substrates. The intensity of the photoluminescence increases very strongly as a result of electrolytic oxidation of porous layers. The spectrum of the pulsed photoluminescence consists of a series of overlapping bands from 1.8 to 3.3 eV. Investigations of the initial SiC films showed that they are nonstoichiometric and strongly disordered. Nonetheless, the intensity of the photoluminescence of the oxidized porous layers is much higher than can be obtained from correspondingly treated SiC crystals or crystalline films.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. M. Danishevskii, V. B. Shuman, E. G. Guk & A. Yu. Rogachev

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  1. A. M. Danishevskii
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  2. V. B. Shuman
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  3. E. G. Guk
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  4. A. Yu. Rogachev
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Fiz. Tekh. Poluprovodn. 31, 420–424 (April 1997)

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Danishevskii, A.M., Shuman, V.B., Guk, E.G. et al. Intense photoluminescence of porous layers of SiC films grown on silicon substrates. Semiconductors 31, 354–358 (1997). https://doi.org/10.1134/1.1187162

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  • DOI: https://doi.org/10.1134/1.1187162

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