1. Study of the intermediate layer at the n ⁺-CdS/p-CdTe interface

   • S. A. Muzafarova
   • B. U. Aitbaev
   • Zh. Zhanabergenov

   Atomic Structure and Nonelectronic Properties of Semiconductors 17 December 2008 Pages: 1377 - 1382

2. Energy spectrum of charge carriers in Ag₂Te

   • S. A. Aliyev
   • Z. F. Agayev
   • R. I. Selimzadeh

   Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1383 - 1387

3. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)

   • N. A. Poklonski
   • S. A. Vyrko
   • A. G. Zabrodskii

   Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1388 - 1394

4. Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs

   • N. N. Ageeva
   • I. L. Bronevoi
   • A. N. Krivonosov

   Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1395 - 1402

5. Type II broken-gap GaSb_{1 − x} Asx/InAs heterojunction (x < 0.15): Evolution of the band diagram for the ternary solid solution

   • V. V. Romanov
   • K. D. Moiseev
   • Yu. P. Yakovlev

   Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1403 - 1407

6. Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype

   • V. I. Sankin
   • P. P. Shkrebiy

   Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1408 - 1412

7. Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching

   • M. Pociask
   • I. I. Izhnin
   • V. I. Ivanov-Omskii

   Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1413 - 1415

8. Surface states on the n-InN-electrolyte interface

   • A. A. Gutkin
   • M. É. Rudinsky
   • S. Gwo

   Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1416 - 1419

9. AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

   • V. N. Jmerik
   • A. M. Mizerov
   • G. P. Yablonskii

   Low-Dimensional Systems 17 December 2008 Pages: 1420 - 1426

10. The binding energy of excitons and X ⁺ and X ⁻ trions in one-dimensional systems

    • M. A. Semina
    • R. A. Sergeev
    • R. A. Suris

    Low-Dimensional Systems 17 December 2008 Pages: 1427 - 1433

11. Radiation hardness of SiC subjected to alternating irradiation and annealing

    • A. M. Ivanov
    • N. B. Strokan
    • A. A. Lebedev

    Physics of Semiconductor Devices 17 December 2008 Pages: 1434 - 1439

12. An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

    • M. M. Zverev
    • N. A. Gamov
    • P. S. Kop’ev

    Physics of Semiconductor Devices 17 December 2008 Pages: 1440 - 1444

13. Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

    • Yu. B. Samsonenko
    • G. É. Cirlin
    • V. G. Dubrovskii

    Fabrication, Treatment, and Testing of Materials and Structures 17 December 2008 Pages: 1445 - 1449

14. Growth of 4H-polytype silicon carbide ingots on (10\( \bar 1 \)0) seeds

    • D. D. Avrov
    • A. V. Bulatov
    • Yu. M. Tairov

    Fabrication, Treatment, and Testing of Materials and Structures 17 December 2008 Pages: 1450 - 1453