1. Interaction between copper and antimony in a solid solution based on germanium with the formation of a charged complex

   • V. M. Glazov
   • A. Ya. Potemkin

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 495 - 501

2. Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

   • V. P. Kuznetsov
   • R. A. Rubtsova

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 502 - 509

3. The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

   • O. V. Aleksandrov
   • A. O. Zakhar’in
   • Yu. A. Nikolaev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 510 - 513

4. Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals

   • K. D. Glinchuk
   • N. M. Litovchenko
   • O. N. Stril’chuk

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 514 - 516

5. Effect of diffusion length and surface recombination on the photopleochroism of anisotropic crystals

   • G. A. Medvedkin

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 517 - 520

6. Effect of diffusion length and surface recombination on the polarization quantum efficiency of anisotropic crystals

   • G. A. Medvedkin

   Electronic and Optical Properties of Semiconductors Pages: 521 - 524

7. Thermoelectric power of the n-InSb in a transverse quantizing magnetic field at a large temperature gradient

   • M. M. Gadzhialiev

   Electronic and Optical Properties of Semiconductors Pages: 525 - 526

8. Influence of annealing on the dislocation-related electrical conductivity of germanium

   • S. A. Shevchenko

   Electronic and Optical Properties of Semiconductors Pages: 527 - 533

9. Optical spectroscopy of excitonic states in CuInSe₂

   • A. V. Mudryi
   • M. V. Yakushev
   • A. I. Patuk

   Electronic and Optical Properties of Semiconductors Pages: 534 - 537

10. Effect of uniaxial deformation on electrophysical parameters of 6H-SiC p-n structures

    • A. A. Lebedev

    Electronic and Optical Properties of Semiconductors Pages: 538 - 540

11. Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy

    • L. S. Berman
    • V. G. Danil’chenko
    • F. Yu. Soldatenkov

    Electronic and Optical Properties of Semiconductors Pages: 541 - 544

12. Photocapacitance effect in a monopolar metal-insulator-semiconductor capacitor at low temperatures

    • N. A. Penin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 545 - 549

13. Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal

    • D. A. Usanov
    • A. V. Skripal’
    • V. E. Orlov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 550 - 554

14. Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

    • G. Gulyamov
    • M. G. Dadamirzaev
    • S. R. Boidedaev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 555 - 557

15. Photosensitivity of thin-film structures based on (CuInSe₂)_x(2ZnSe)_1−x solid solutions

    • V. Yu. Rud’
    • Yu. V. Rud’
    • L. V. Rusak

    Semiconductor Structures, Interfaces, and Surfaces Pages: 558 - 562

16. Shallow acceptors in strained Ge/Ge_1−x Si_x heterostructures with quantum wells

    • V. Ya. Aleshkin
    • B. A. Andreev
    • O. A. Kuznetsov

    Low-Dimensional Systems Pages: 563 - 567

17. Exciton energy states and photoluminescence spectra of the strained-layer ZnS-ZnSe superlattices

    • N. V. Bondar’
    • V. V. Tishchenko
    • M. S. Brodin

    Low-Dimensional Systems Pages: 568 - 574

18. Zero-phonon and dipole Γ-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field

    • V. Ya. Aleshkin
    • A. A. Andronov

    Low-Dimensional Systems Pages: 575 - 582

19. On the spectra of electrons and holes in an open spherical nanoheterostructure (through the example of GaAs/Al_xGa_1−x As/GaAs)

    • N. V. Tkach
    • V. A. Holovatsky
    • O. N. Voitsekhivska

    Low-Dimensional Systems Pages: 583 - 588

20. Study of decay of elastically strained germanium film at the silicon surface

    • I. V. Zakurdaev
    • M. V. Baizer
    • M. M. Rzaev

    Low-Dimensional Systems Pages: 589 - 593

21. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

    • N. A. Maleev
    • A. E. Zhukov
    • D. Bimberg

    Low-Dimensional Systems Pages: 594 - 597

22. Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering

    • P. A. Ivanov
    • O. I. Kon’kov
    • E. I. Terukov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 602

23. Charge-carrier transport in a double-collector magnetotransistor

    • M. A. Glauberman
    • V. V. Kozel
    • A. V. Nakhabin

    Amorphous, Vitreous, and Porous Semiconductors Pages: 603 - 605

24. A method for modulation of the charge-carrier mobility in a semiconductor

    • V. V. Novikov
    • R. R. Vardanyan
    • É. E. Pakhomov

    Physics of Semiconductor Devices Pages: 606 - 608

25. Power conversion efficiency of quantum dot laser diodes

    • A. E. Zhukov
    • A. R. Kovsh
    • D. Bimberg

    Physics of Semiconductor Devices Pages: 609 - 613