Effect of hardening temperature on the disintegration kinetics of the Al-10 at. % Zn alloy V. M. Agishev Solid State Physics Pages: 251 - 256
Acoustic radiation on heating deformed aluminum V. A. PlotinkovYu. I. Paskal' Solid State Physics Pages: 256 - 259
Electric properties of single-crystalline nickel films deposited by the method of chemical transport reactions N. I. KiselevS. V. KanE. V. Babkin Solid State Physics Pages: 259 - 262
Nonuniqueness of the solution of the plane-crack problem A. G. Ivanchin Solid State Physics Pages: 263 - 266
Dependence of the yield stress of filamentary sodium chloride crystals on the starting dislocation structure Yu. D. AverichevS. U. Gol'denberg Solid State Physics Pages: 267 - 271
Gas formation in liquid hydrocarbon dielectrics under the action of particle discharges A. M. AndreevP. N. BondarenkoS. N. Koikov Semiconductor and Dielectric Physics Pages: 272 - 274
Polarization switching in metal-dielectric-metal structures with polycrystalline and heteroepitaxial (Ba, Sr) TiO3 films produced by cathode sputtering S. V. BiryukovV. M. MukhortovE. G. Fesenko Semiconductor and Dielectric Physics Pages: 275 - 278
Current-voltage characteristics of a Schottky diode under conditions of a current disturbance of the distribution function V. I. StrikhaD. I. Sheka Semiconductor and Dielectric Physics Pages: 278 - 284
Photogalvanomagnetic effect in relaxational conditions Yu. P. Drozhzhov Semiconductor and Dielectric Physics Pages: 284 - 288
Recombination radiation in p-ZnSnP2 single crystals L. V. KradinovaZ. A. ParimbekovYu. V. Rud' Semiconductor and Dielectric Physics Pages: 288 - 292
Mobility of delocalized charge carriers in an ideal homopolar glass as a function of temperature V. D. Iskra Semiconductor and Dielectric Physics Pages: 292 - 297
Gallium arsenide avalanche-type S-diode based on a n+-π-ν-n structure S. S. KhludkovO. P. TolbanovA. V. Koretskii Semiconductor and Dielectric Physics Pages: 298 - 301
Influence of loss in substrate on dispersion of electromagnetic waves in active semiconductor transmission lines M. S. KravtsovV. M. PrigorovskiiE. F. Firyago Semiconductor and Dielectric Physics Pages: 301 - 304
Field effect in an n-GaAs metal-anodic oxide-film junction S. V. TikhovI. A. KarpovichG. V. Funina Semiconductor and Dielectric Physics Pages: 304 - 307
Compensating effect of Sn impurity in cadmium telluride O. A. ParfenyukA. V. SavitskiiA. L. Al'bota Semiconductor and Dielectric Physics Pages: 308 - 310
Calculation of the band structure of GaN and InN using the pseudopotential method S. N. GrinyaevV. Ya. MalakhovV. A. Chaldyshev Semiconductor and Dielectric Physics Pages: 311 - 314
Dispersion laws of hot holes in silicon P. M. GritsyukK. Ya. Shtivel'manI. M. Raenko Semiconductor and Dielectric Physics Pages: 315 - 319
Absorption of resonant electromagnetic radiation in electron-atom collisions T. U. ArslanbekovV. A. PazdzerskiiV. I. Usachenko Plasma Physics Pages: 320 - 324
Large-scale resistive instability of a relativistic electron beam in a plasma channel V. P. Grigor'evA. V. ZakharovN. S. Shulaev Plasma Physics Pages: 324 - 328
Characteristics of volume discharge in gaps with a small interelectrode separation Yu. I. BychkovV. V. OsipovG. M. Khamidulin Plasma Physics Pages: 329 - 333
Probe method of determining the anisotropic velocity distribution of electrons in a plasma A. M. DevyatovM. A. Mal'kov Plasma Physics Pages: 333 - 338