Soviet Physics Journal

, Volume 29, Issue 4, pp 298–301 | Cite as

Gallium arsenide avalanche-type S-diode based on a n+-π-ν-n structure

  • S. S. Khludkov
  • O. P. Tolbanov
  • A. V. Koretskii
Semiconductor and Dielectric Physics


The results are presented of an investigation of the electrical characteristics of avalanche S-diodes based on a new type of structure (+-π-ν-n), which is obtained by diffusing iron in GaAs with n = 1.1017 cm−3. The diodes have regions of S-type negative differential resistance (NDR), for both bias polarities and have a number of other features by comparison with diodes based on the π-ν-n structures with fused contacts. We discuss the mechanism for the formation of the NDR region of the voltage-current characteristics of the diode.


Iron GaAs Gallium Electrical Characteristic Arsenide 
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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • S. S. Khludkov
    • 1
  • O. P. Tolbanov
    • 1
  • A. V. Koretskii
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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