Abstract
The results are presented of an investigation of the electrical characteristics of avalanche S-diodes based on a new type of structure (+-π-ν-n), which is obtained by diffusing iron in GaAs with n = 1.1017 cm−3. The diodes have regions of S-type negative differential resistance (NDR), for both bias polarities and have a number of other features by comparison with diodes based on the π-ν-n structures with fused contacts. We discuss the mechanism for the formation of the NDR region of the voltage-current characteristics of the diode.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 54–58, April, 1986.
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Khludkov, S.S., Tolbanov, O.P. & Koretskii, A.V. Gallium arsenide avalanche-type S-diode based on a n+-π-ν-n structure. Soviet Physics Journal 29, 298–301 (1986). https://doi.org/10.1007/BF00893001
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DOI: https://doi.org/10.1007/BF00893001