Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology A. J. AliabevA. S. Korotkov OriginalPaper 14 July 2016 Pages: 229 - 236
Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors A. V. AmirkhanovS. I. VolkovV. A. Shakhnov OriginalPaper 14 July 2016 Pages: 237 - 241
Secondary ion mass spectrometry study of the formation of a nanometer oxide film on a titanium nitride surface V. M. MordvintsevV. V. NaumovS. G. Simakin OriginalPaper 14 July 2016 Pages: 242 - 255
Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma R. K. Yafarov OriginalPaper 14 July 2016 Pages: 256 - 261
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition O. M. OrlovA. M. MarkeevE. S. Gornev OriginalPaper 14 July 2016 Pages: 262 - 269
Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate R. V. GoldsteinT. M. MakhviladzeM. E. Sarychev OriginalPaper 14 July 2016 Pages: 270 - 277
Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations A. M. Efremov OriginalPaper 14 July 2016 Pages: 278 - 284
Thin film negative electrode based on silicon composite for lithium-ion batteries A. A. AirapetovS. V. VasilievA. B. Churilov OriginalPaper 14 July 2016 Pages: 285 - 291
A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles A. B. BoruzdinaA. V. UlanovaA. V. Yanenko OriginalPaper 14 July 2016 Pages: 292 - 297
