1. Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction

   • V. S. Ezhlov
   • A. G. Mil’vidskaya
   • M. V. Mezhennyi

   OriginalPaper 21 November 2015 Pages: 507 - 511

2. Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

   • Yu. A. Fedotova
   • D. K. Ivanov
   • P. Yu. Apel’

   OriginalPaper 21 November 2015 Pages: 512 - 516

3. Obtaining barium hexaferrite brand 7BI215 with improved isotropic properties

   • I. I. Kaneva
   • V. G. Kostishin
   • E. I. Kislyakova

   OriginalPaper 21 November 2015 Pages: 517 - 522

4. Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

   • G. Ya. Krasnikov
   • N. A. Zaitsev
   • S. V. Korobov

   OriginalPaper 21 November 2015 Pages: 523 - 530

5. Metal oxide nanoparticles synthesized on porous silicon substrates

   • I. E. Kononova
   • A. S. Lenshin
   • V. A. Moshnikov

   OriginalPaper 21 November 2015 Pages: 531 - 536

6. Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

   • K. L. Enisherlova
   • V. G. Goryachev
   • S. A. Kapilin

   OriginalPaper 21 November 2015 Pages: 537 - 545

7. Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation

   • R. I. Batalov
   • V. F. Valeev
   • A. L. Stepanov

   OriginalPaper 21 November 2015 Pages: 546 - 551

8. Long-range stresses generated by misfit dislocations in epitaxial films

   • E. M. Trukhanov
   • A. V. Kolesnikov
   • I. D. Loshkarev

   OriginalPaper 21 November 2015 Pages: 552 - 558

9. Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source

   • K. B. Tynyshtykbaev
   • Yu. A. Ryabikin
   • Kh. A. Abdullin

   OriginalPaper 21 November 2015 Pages: 559 - 563

10. Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems

    • K. D. Vanyukhin
    • R. V. Zakharchenko
    • L. A. Seidman

    OriginalPaper 21 November 2015 Pages: 564 - 568

11. Solar cells with a charge pump: Theoretical prospects and technological aspects of the application

    • V. A. Gusev
    • V. V. Starkov
    • A. V. Teterskii

    OriginalPaper 21 November 2015 Pages: 569 - 574

12. Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy

    • O. S. Komkov
    • D. D. Firsov
    • A. S. Petrov

    OriginalPaper 21 November 2015 Pages: 575 - 578

13. Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes

    • A. S. Vaskou
    • V. S. Niss
    • A. F. Kerentsev

    OriginalPaper 21 November 2015 Pages: 579 - 584

14. Structures and electronic properties of defects on the borders of silicon bonded wafers

    • A. N. Tereshchenko
    • E. A. Steinman
    • O. Kononchuk

    OriginalPaper 21 November 2015 Pages: 585 - 589

15. Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers

    • A. F. Kovalenko
    • A. A. Vorobiev

    OriginalPaper 21 November 2015 Pages: 590 - 594