Abstract
The formation and self-organization of a porous silicon (por-Si) surface mosaic structure in the long-term anodic etching of p-type conductivity Si (100) (p-Si) in electrolytes with an internal power source is considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disporportionation reactions during the etching of silicon single crystals, as in the case of the epitaxial growth of nanocrystallites by molecular beam deposition of silicon atoms on the A III B V and Si semiconductor surface and their further spontaneous self-organization. The quantum-size effects occurring in the local areas of the atomically rough surfaces of a real silicon crystal are taken into account. We note the significant role of oxidation of the silicon surface in the formation and self-organization of a mosaic structure of por-Si during long-term anodic etching of p-Si (100) in the HF: H2O2 electrolyte.
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Original Russian Text © K.B. Tynyshtykbaev, Yu.A. Ryabikin, S.Zh. Tokmoldin, B.A. Rakymetov, T. Aytmukan, Kh.A. Abdullin, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki, 2014, No. 1, pp. 31–36.
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Tynyshtykbaev, K.B., Ryabikin, Y.A., Tokmoldin, S.Z. et al. Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source. Russ Microelectron 44, 559–563 (2015). https://doi.org/10.1134/S1063739715080120
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DOI: https://doi.org/10.1134/S1063739715080120