Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction V. S. EzhlovA. G. Mil’vidskayaM. V. Mezhennyi OriginalPaper 21 November 2015 Pages: 507 - 511
Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates Yu. A. FedotovaD. K. IvanovP. Yu. Apel’ OriginalPaper 21 November 2015 Pages: 512 - 516
Obtaining barium hexaferrite brand 7BI215 with improved isotropic properties I. I. KanevaV. G. KostishinE. I. Kislyakova OriginalPaper 21 November 2015 Pages: 517 - 522
Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers G. Ya. KrasnikovN. A. ZaitsevS. V. Korobov OriginalPaper 21 November 2015 Pages: 523 - 530
Metal oxide nanoparticles synthesized on porous silicon substrates I. E. KononovaA. S. LenshinV. A. Moshnikov OriginalPaper 21 November 2015 Pages: 531 - 536
Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures K. L. EnisherlovaV. G. GoryachevS. A. Kapilin OriginalPaper 21 November 2015 Pages: 537 - 545
Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation R. I. BatalovV. F. ValeevA. L. Stepanov OriginalPaper 21 November 2015 Pages: 546 - 551
Long-range stresses generated by misfit dislocations in epitaxial films E. M. TrukhanovA. V. KolesnikovI. D. Loshkarev OriginalPaper 21 November 2015 Pages: 552 - 558
Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source K. B. TynyshtykbaevYu. A. RyabikinKh. A. Abdullin OriginalPaper 21 November 2015 Pages: 559 - 563
Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems K. D. VanyukhinR. V. ZakharchenkoL. A. Seidman OriginalPaper 21 November 2015 Pages: 564 - 568
Solar cells with a charge pump: Theoretical prospects and technological aspects of the application V. A. GusevV. V. StarkovA. V. Teterskii OriginalPaper 21 November 2015 Pages: 569 - 574
Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy O. S. KomkovD. D. FirsovA. S. Petrov OriginalPaper 21 November 2015 Pages: 575 - 578
Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes A. S. VaskouV. S. NissA. F. Kerentsev OriginalPaper 21 November 2015 Pages: 579 - 584
Structures and electronic properties of defects on the borders of silicon bonded wafers A. N. TereshchenkoE. A. SteinmanO. Kononchuk OriginalPaper 21 November 2015 Pages: 585 - 589
Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers A. F. KovalenkoA. A. Vorobiev OriginalPaper 21 November 2015 Pages: 590 - 594