1. Impurity accumulation in an adsorption layer during MBE doping

   • Yu. Yu. Hervieu

   OriginalPaper 26 November 2014 Pages: 519 - 525

2. New hybrid materials for organic light-emitting diode devices

   • R. I. Avetisov
   • O. B. Petrova
   • I. Kh. Avetisov

   OriginalPaper 26 November 2014 Pages: 526 - 530

3. Formation and structure of mesoporous silicon

   • N. I. Kargin
   • A. O. Sultanov
   • A. S. Ionov

   OriginalPaper 26 November 2014 Pages: 531 - 535

4. Formation of bidomain structure in lithium niobate plates by the stationary external heating method

   • A. S. Bykov
   • S. G. Grigoryan
   • Yu. N. Parkhomenko

   OriginalPaper 26 November 2014 Pages: 536 - 542

5. Formation of ferroelectic domain stuctures in LiTaO₃ crystals formed by direct electron-beam repolarization

   • D. V. Roschupkin
   • E. V. Emelin
   • O. A. Buzanov

   OriginalPaper 26 November 2014 Pages: 543 - 545

6. Statistical analysis of germanium influence on radiation and thermal stability of the n-p-n-p device structures based on CZ-Si〈P,Ge〉 electrophysical properties

   • S. V. Bytkin
   • T. V. Kritskaya
   • S. P. Kobeleva

   OriginalPaper 26 November 2014 Pages: 546 - 551

7. Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution

   • A. V. Voitsekhovskii
   • S. N. Nesmelov
   • S. M. Dzyadookh

   OriginalPaper 26 November 2014 Pages: 552 - 558

8. Photoelectric converters in a system with spectral splitting of the solar energy

   • S. Yu. Kurin
   • V. D. Doronin
   • K. B. Eidel’man

   OriginalPaper 26 November 2014 Pages: 559 - 564

9. Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method

   • A. V. Mazalov
   • D. R. Sabitov
   • R. Kh. Akchurin

   OriginalPaper 26 November 2014 Pages: 565 - 568

10. Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride

    • K. D. Vanyukhin
    • R. V. Zakharchenko
    • L. A. Seidman

    OriginalPaper 26 November 2014 Pages: 569 - 574

11. On the temperature dependence of silicon quantum dot photoluminescence

    • S. N. Nagornykh
    • V. I. Pavlenkov
    • D. I. Tetelbaum

    OriginalPaper 26 November 2014 Pages: 575 - 580

12. Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap

    • F. I. Manyakhin

    OriginalPaper 26 November 2014 Pages: 581 - 586

13. Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters

    • I. S. Smirnov
    • E. G. Novoselova
    • I. S. Monakhov

    OriginalPaper 26 November 2014 Pages: 587 - 589