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Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution

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Abstract

The electrophysical and photoelectrical properties of MIS structures are studied using MBE grown heteroepitaxial HgCdTe with inhomogeneous composition distribution. It is shown that surface varib- and layers with increased surface CdTe composition in n-Hg1 − x Cd x Te-based MIS structures (x = 0.21–0.23) strongly affect the dependences of capacity and photo-emf on the voltage bias and frequency. Parameters of n-Hg0.7Cd0.3Te-based MIS structures with periodic barrier-type regions of increased CdTe composition are studied, and their effect is shown on the parameters of MIS structures when they are located near the dielectric-semiconductor interface. Electrical properties of n-Hg1 − x Cd x Te-based MIS structures (x = 0.62–0.73) with potential-well regions of decreased CdTe composition in the surface region are studied.

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Authors and Affiliations

  1. Siberian Physical-Technical Institute, Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadookh

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  1. A. V. Voitsekhovskii
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  2. S. N. Nesmelov
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  3. S. M. Dzyadookh
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Correspondence to A. V. Voitsekhovskii.

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Original Russian Text © A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadookh, 2013, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki, 2013, No. 1, pp. 38–45.

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Voitsekhovskii, A.V., Nesmelov, S.N. & Dzyadookh, S.M. Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution. Russ Microelectron 43, 552–558 (2014). https://doi.org/10.1134/S1063739714080149

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  • DOI: https://doi.org/10.1134/S1063739714080149

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