Institute for design problems in microelectronics, Russian Academy of Sciences (IPPM RAS), Moscow, Russia OriginalPaper 09 November 2011 Pages: 369 - 370
Electrical parameters and the plasma composition in HCl-H2 mixtures A. M. EfremovA. V. YudinaV. I. Svettsov Low-Temperature Plasma Diagnostics 09 November 2011 Pages: 371 - 378
Spectral study of HCl plasma etching of gallium arsenide A. V. DunaevS. A. PivovarenokV. I. Svettsov Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 379 - 382
Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering V. I. RudakovE. A. BogoyavlenskayaV. V. Naumov Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 383 - 388
Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures V. I. RudakovYu. I. DenisenkoS. G. Simakin Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 389 - 394
Wave phenomena in the finishing of diamond crystals S. M. PintusV. Yu. KarasevE. V. Gladchenkov Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 395 - 402
Low-temperature pulsed vapor-phase deposition of thin layers of metal ruthenium for micro- and nanoelectronics. Part 5. Interrelation of growth regularities, structure, and properties of ruthenium layers V. Yu. Vasilyev Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 403 - 413
Optical maskless lithography G. V. BelokopytovYu. V. Ryzhkova Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 414 - 427
Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy V. I. GrafutinI. N. MeshkovS. L. Yakovenko Measurements 09 November 2011 Pages: 428 - 435
Scanning electron microscopy used to measure the feature dimensions of a nanoscale test pattern on a silicon surface V. P. GavrilenkoYu. V. LarionovV. A. Sharonov Nanometrology 09 November 2011 Pages: 436 - 440