Russian Microelectronics

, Volume 40, Issue 6, pp 389–394 | Cite as

Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

  • V. I. RudakovEmail author
  • Yu. I. Denisenko
  • V. V. Naumov
  • S. G. Simakin
Technological Processes in Micro- and Nanoelectronics


The initial Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on the Si(100) substrate by magnetron sputtering were subjected to two-stage rapid thermal annealing (RTA) in the nitrogen ambient. The samples of the structures were controlled using the time-of-flight SIMS, the Auger spectroscopy, scanning electron microscopy, X-ray dispersion microprobe analysis, and measurements of the layer resistance at each stage of annealing. At the RTA-1 stage (550°C, 45 s), a sacrificial layer formed on the surface. This layer consisted of the titanium (oxy)nitride coating, into which the residual impurities (O, C, and N) were forced out, and the transient Co-Si-Ti(TiO,TiN) layer with a high cobalt content and a low (trace) titanium content. After the selective removal of this sacrificial layer, the surface composition corresponded to monosilicide CoSi, which transformed into the highly conductive CoSi2 phase at the RTA-2 stage (830°C, 25 s).


Rapid Thermal Annealing RUSSIAN Microelectronics Sacrificial Layer Auger Spectroscopy Nitride Coating 
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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • Yu. I. Denisenko
    • 1
  • V. V. Naumov
    • 1
  • S. G. Simakin
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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