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Russian Microelectronics

, Volume 40, Issue 6, pp 389–394 | Cite as

Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

  • V. I. RudakovEmail author
  • Yu. I. Denisenko
  • V. V. Naumov
  • S. G. Simakin
Technological Processes in Micro- and Nanoelectronics

Abstract

The initial Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on the Si(100) substrate by magnetron sputtering were subjected to two-stage rapid thermal annealing (RTA) in the nitrogen ambient. The samples of the structures were controlled using the time-of-flight SIMS, the Auger spectroscopy, scanning electron microscopy, X-ray dispersion microprobe analysis, and measurements of the layer resistance at each stage of annealing. At the RTA-1 stage (550°C, 45 s), a sacrificial layer formed on the surface. This layer consisted of the titanium (oxy)nitride coating, into which the residual impurities (O, C, and N) were forced out, and the transient Co-Si-Ti(TiO,TiN) layer with a high cobalt content and a low (trace) titanium content. After the selective removal of this sacrificial layer, the surface composition corresponded to monosilicide CoSi, which transformed into the highly conductive CoSi2 phase at the RTA-2 stage (830°C, 25 s).

Keywords

Rapid Thermal Annealing RUSSIAN Microelectronics Sacrificial Layer Auger Spectroscopy Nitride Coating 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • Yu. I. Denisenko
    • 1
  • V. V. Naumov
    • 1
  • S. G. Simakin
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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