Computer simulation of the processes of formation of microclusters on the basis of scaling invariance of random walk A. V. MozhaevA. V. Prokaznikov Micro- and Nanostructure Modeling and Simulation 19 September 2009 Pages: 291 - 298
Simulation of elastic quantum scattering at atomic collisions in the semiclassical approximation including interference effects K. S. Arakelov Micro- and Nanostructure Modeling and Simulation 19 September 2009 Pages: 299 - 311
Numerical modeling of temperature fields in the elements and units of electronic systems G. V. KuznetsovM. A. Sheremet Micro- and Nanostructure Modeling and Simulation 19 September 2009 Pages: 312 - 319
Methods of parallel integration of carbon nanotubes during the formation of functional devices for microelectronics and sensor technologies I. I. Bobrinetskii Production-Process Dynamics 19 September 2009 Pages: 320 - 326
Electrophysical characteristics of HfO2 gate structures formed by electron-beam evaporation A. G. Vasil’evR. A. ZakharovI. A. Khorin Production-Process Dynamics 19 September 2009 Pages: 327 - 333
Magnetoresistance of multilayered structures obtained by the magnetron method V. V. NaumovE. Yu. Buchin Thin Films 19 September 2009 Pages: 334 - 338
Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter V. I. RudakovA. L. KurenyaM. L. Gitlin Thin Films 19 September 2009 Pages: 339 - 344
Lead-free alloy soldering of dies V. V. ZeninV. I. BaikoO. V. Khishko Semiconductor Devices 19 September 2009 Pages: 345 - 353
A device for controlling the voltage standing-wave ratio of microwave attenuators S. N. Grigor’ev Semiconductor Devices 19 September 2009 Pages: 354 - 362