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Russian Microelectronics

, Volume 38, Issue 5, pp 339–344 | Cite as

Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter

  • V. I. RudakovEmail author
  • A. L. Kurenya
  • A. A. Shornikov
  • M. L. Gitlin
Thin Films

Abstract

An experimental installation for the deposition of films of IV–VI compounds by the hot-wall method on silicon substrates 100 mm in diameter is described. The PbTe films on silicon wafers with orientation (100) are obtained and investigated. The PbTe films have a continuous mirror surface and repeat the substrate orientation. The peculiarities of obtaining such films are discussed.

PACS

81.15.-z 

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Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • A. L. Kurenya
    • 1
  • A. A. Shornikov
    • 1
  • M. L. Gitlin
    • 1
  1. 1.Yaroslavl’ Branch, Physicotechnical InstituteRussian Academy of SciencesYaroslavl’Russia

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