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Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter

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Abstract

An experimental installation for the deposition of films of IV–VI compounds by the hot-wall method on silicon substrates 100 mm in diameter is described. The PbTe films on silicon wafers with orientation (100) are obtained and investigated. The PbTe films have a continuous mirror surface and repeat the substrate orientation. The peculiarities of obtaining such films are discussed.

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References

  1. Alchalabi, K., Zimin, D., and Zogg, H., Electron Dev. Lett., 2001, vol. 22, p. 110.

    Article  Google Scholar 

  2. Gladkii, S.V., Rudakov, V.I., Saunin, I.V., and Sergeeva, Ya.V., Neorg. Mater., 1993, vol. 29, no. 3, p. 333.

    Google Scholar 

  3. Aleksandrova, O.A., Akhmedzhanov, A.T., Bondokov, R.Ts., et al., Fiz. Tekhn. Poluprovodn., 2000, vol. 34,issue 12, p. 1420 [Semiconductors (Engl. Transl.), 2000, vol. 34, issue 12, p. 1365].

    Google Scholar 

  4. Zogg, H., Fach, A., John, J. et al., Opt. Eng., 1995, vol. 34, p. 1964.

    Article  Google Scholar 

  5. Dolgopolova, E.A., Samoilov, A.M., Sharov, M.K., and Synorov, Yu.V., Kondens. Sredy Mezhfazn. Granithy., 2000, vol. 1, no. 4, p. 297.

    Google Scholar 

  6. Ugai, Ya.A., Samoilov, A.M., Sharov, M.K. et al., Poverkhn. Rentg. Sinkhrotron. Neitron. Issled., 2002, no. 3, p. 28.

  7. Rudakov, V.I. and Smirnov, I.M., J. Phys. IV, 2002, vol. 12, p. 75.

    Google Scholar 

  8. Lopez-Otero, A., Thin Sol. Films, 1978, no. 1, p. 3.

  9. Holstein, W.L., J. Electrochem. Soc.: Solid-State Sci. Technol., 1988, vol. 135, no. 7, p. 1788.

    Google Scholar 

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Authors and Affiliations

  1. Yaroslavl’ Branch, Physicotechnical Institute, Russian Academy of Sciences, ul. Universitetskaya 21, Yaroslavl’, 150 007, Russia

    V. I. Rudakov, A. L. Kurenya, A. A. Shornikov & M. L. Gitlin

Authors
  1. V. I. Rudakov
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  2. A. L. Kurenya
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  3. A. A. Shornikov
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  4. M. L. Gitlin
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Corresponding author

Correspondence to V. I. Rudakov.

Additional information

Original Russian Text © V.I. Rudakov, A.L. Kurenya, A.A. Shornikov, M.L. Gitlin, 2009, published in Mikroelektronika, 2009, Vol. 38, No. 5, pp. 374–380.

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Rudakov, V.I., Kurenya, A.L., Shornikov, A.A. et al. Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter. Russ Microelectron 38, 339–344 (2009). https://doi.org/10.1134/S1063739709050072

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  • DOI: https://doi.org/10.1134/S1063739709050072

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