Foreword to the special issue on ionizing-radiation effects in microelectronics EditorialNotes Pages: 137 - 137
Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model A. Y. NikiforovP. K. Skorobogatov Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 138 - 149
Estimating the IC upset/failure threshold of dose rate for a radiation pulse sequence A. I. ChumakovV. V. Gontar’ Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 150 - 155
Modeling rail-span collapse in ICs exposed to a single radiation pulse A. I. Chumakov Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 156 - 161
Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology A. V. KirgizovaA. Y. NikiforovP. K. Skorobogatov Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 162 - 176
Modeling and simulation of the enhanced low-dose-rate sensitivity of thick isolating layers in advanced ICs G. I. Zebrev Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 177 - 184
Modeling neutron ionization effects on high-density CMOS circuit elements G. I. Zebrev Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 185 - 196
Complementary-transistor wideband path for the compensation of analog ICs designed to operate under pulsed ionizing irradiation T. M. Agakhanyan Radiation-Effect Modeling and Simulation in Silicon Microelectronics Pages: 197 - 199
Enhancing the performance of radiation-hardened embedded computer systems V. M. Antimirov Ensuring Radiation Hardness Pages: 200 - 204
