1. Electrical behavior of modulation-and delta-doped Al _x Ga_{1 − x} As/In _y Ga_{1 − y} As/GaAs PHEMT structures

   • G. B. Galiev
   • I. S. Vasil’evskii
   • V. G. Mokerov

   Micro-and Nanoelectronic Devices Pages: 67 - 73

2. Cold atoms in optical lattices as qubits for a quantum computer

   • D. B. Tretyakov
   • I. I. Beterov
   • I. I. Ryabtsev

   Micro-and Nanoelectronic Devices Pages: 74 - 77

3. Electroluminescence mechanisms in SiO _x N _y (Si) nanocomposite films

   • V. G. Baru
   • V. A. Zhitov
   • E. A. Shteinman

   Materials and Microstructure Characterization Pages: 78 - 86

4. Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

   • B. V. Kornilov
   • V. V. Privezentsev

   Materials and Microstructure Characterization Pages: 87 - 93

5. Influence of background impurities on the formation of stacking faults in silicon wafers

   • D. I. Brinkevich
   • V. S. Prosolovich
   • A. N. Petlitskii

   Materials and Microstructure Characterization Pages: 94 - 97

6. Multiplex Fourier-transform spectroscopy in the characterization of stochastic inhomogeneous film growth: A conceptual framework

   • V. A. Kotenev

   Materials and Microstructure Characterization Pages: 98 - 104

7. Reading sensitivity of a new thermomechanical data-storage technique: The effect of reducing probe dimensions

   • A. B. Petrin

   Process Technologies Pages: 105 - 115

8. Inclusion-exclusion principle in the design of a BIST unit for LSI and VLSI circuits

   • I. P. Kobyak

   Circuit Analysis and Synthesis Pages: 116 - 126

9. Transient analysis of RC on-chip transmission lines with respect to propagation speed

   • V. B. Fyodorov

   Circuit Analysis and Synthesis Pages: 127 - 136