Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor Yu. I. BalkareiV. O. NaguchevT. V. Kochiev OriginalPaper Pages: 355 - 361
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System A. A. LomovR. M. ImamovV. G. Mokerov OriginalPaper Pages: 362 - 367
Resistors Integrated into MCM-D Modules: Fabrication and Performance A. I. Vorob'evaK. V. Moskvichev OriginalPaper Pages: 368 - 375
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures S. A. Krivelevich OriginalPaper Pages: 376 - 379
High-Rate Deposition of Amorphous Silicon B. G. BudagyanA. A. SherchenkovV. D. Chernomordik OriginalPaper Pages: 391 - 396
Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 System N. Ya. ZaitsevG. Ya. KrasnikovI. V. Matyushkin OriginalPaper Pages: 397 - 400
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy P. A. ArutyunovA. L. Tolstikhina OriginalPaper Pages: 401 - 405
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion Depolarization E. I. Gol'dmanA. G. ZhdanN. F. Kukharskaya OriginalPaper Pages: 406 - 412
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers V. Ya. UritskiiA. P. KrylovS. E. Borisov OriginalPaper Pages: 413 - 416
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures V. Ya. UritskiiA. P. KrylovA. A. Bushlyakov OriginalPaper Pages: 417 - 422
