The hyperfine energy spectrum of31P donors in a silicon NMR quantum computer K. A. ValievA. A. KokinL. E. Fedichkin OriginalPaper Pages: 285 - 293
Formation of local insulating regions in Si/Si—Ge structures by ion implantation with subsequent stain etching V. V. StarkovE. A. StarostinaYu. B. Gorbatov OriginalPaper Pages: 294 - 298
Frequency-response equalization in integrated current amplifiers with collector—base cross coupling V. G. Prokopenko OriginalPaper Pages: 299 - 302
Performance improvement of CCD image sensor arrays V. A. ArutyunovO. V. Sorokin OriginalPaper Pages: 303 - 306
Charge transfer and structural—impurity complexes in the transition layer of the Si/SiO2 system G. Ya. KrasnikovN. A. ZaitsevI. V. Matyushkin OriginalPaper Pages: 307 - 310
Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching I. I. AmirovV. A. Fedorov OriginalPaper Pages: 311 - 315
The energy of activation of electromigration in aluminum conductors tested by the drift-velocity method O. V. KononenkoV. N. MatveevD. P. Field OriginalPaper Pages: 316 - 323
Low-temperature annealing of SIMOX structures in an inhomogeneous temperature field V. I. RudakovYu. I. DenisenkoB. V. Mochalov OriginalPaper Pages: 324 - 330
An adsorption ellipsometric method for studying porous films and coatings V. A. Tolmachev OriginalPaper Pages: 331 - 344
Discrete electron states at the Si(100)/SiO2 interface S. I. KirillovaV. E. PrimachenkoV. A. Chernobai OriginalPaper Pages: 345 - 348