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Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching

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Abstract

A method for the fabrication of submicron (~0.5 μm) structures is presented. It includes the plasma formation of a three-layer mask, electron-beam exposure, plasma development, and anisotropic plasma etching of a resist and silicon oxide. The development in a fluorine-containing plasma forms the negative image of the exposed pattern (a set of parallel strips). The minimum resolution was 0.5 μm at the exposure dose 8 x l0-4C/cm2. The minimum exposure dose at which separate lines are developed was equal to 1 x 10-4 C/cm2

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Authors and Affiliations

  1. Institute of Microelectronics and Informatics, Russian Academy of Sciences, ul. Universitetskaya 21, 150007, Yaroslavl, Russia

    I. I. Amirov & V. A. Fedorov

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  1. I. I. Amirov
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  2. V. A. Fedorov
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Amirov, I.I., Fedorov, V.A. Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching. Russ Microelectron 29, 311–315 (2000). https://doi.org/10.1007/BF02773282

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  • DOI: https://doi.org/10.1007/BF02773282

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