1. Journal of Materials Science: Materials in Electronics August 2001

   • Peter Capper

   Editorial Introduction Pages: 3 - 3

2. Bulk Bridgman growth of cadmium mercury telluride for IR applications

   • P. Capper

   OriginalPaper Pages: 423 - 428

3. Growth-dependent properties of KTP crystals and PPKTP structures

   • M. Roth
   • N. Angert
   • M. Tseitlin

   OriginalPaper Pages: 429 - 436

4. Crystal growth science between the centuries

   • A. A. Chernov

   OriginalPaper Pages: 437 - 449

5. Thermal effects limitations in mid-infrared continuous wave optical parametric oscillators

   • J.-J. Zondy
   • A. Douillet
   • S. Lobanov

   OriginalPaper Pages: 451 - 460

6. Influence of Bi₂O₃ in the microstructure of SrBi₂Ta₂O₃ films deposited by pulsed laser ablation

   • M. P. Cruz-Jáuregui
   • J. M. Siqueiros
   • J. Portelles

   OriginalPaper Pages: 461 - 465

7. The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and f_max in SiGe hetero-junction bipolar transistors

   • Seung-Yun Lee
   • Hong-Seung Kim
   • Min-Kyu Song

   OriginalPaper Pages: 467 - 472

8. Characterization of p-In₂Se₃ thin films

   • A. F. Qasrawi
   • M. Parlak
   • I. Günal

   OriginalPaper Pages: 473 - 476

9. Oxygen ion beam assisted etching of single crystal diamond chips using reactive oxygen gas

   • S. Kiyohara
   • K. Mori
   • J. Taniguchi

   OriginalPaper Pages: 477 - 481