1. An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

   • J. Diyadi
   • L. Hlou
   • J. P. Nougier

   OriginalPaper 18 January 2007 Pages: 261 - 266

2. SSOR preconditioned GPBiCG method for the linear interference cancellation of asynchronous CDMA systems

   • L. Yang
   • R. S. Chen
   • K. K. Soo

   OriginalPaper 18 January 2007 Pages: 267 - 273

3. Super-resolution using neural networks based on the optimal recovery theory

   • Yizhen Huang
   • Yangjing Long

   OriginalPaper 18 January 2007 Pages: 275 - 281

4. Editorial

   • Hans Kosina
   • Siegfried Selberherr

   EditorialNotes 18 January 2007 Pages: 283 - 283

5. The 3D nanometer device project nextnano: Concepts, methods, results

   • Alex Trellakis
   • Tobias Zibold
   • Peter Vogl

   OriginalPaper 09 December 2006 Pages: 285 - 289

6. A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation

   • Vasily Suvorov
   • Andreas Hössinger
   • Neboysha Ljepojevic

   OriginalPaper 09 December 2006 Pages: 291 - 295

7. A 3D moving grid algorithm for process simulation

   • N. Strecker
   • D. Richards

   OriginalPaper 09 December 2006 Pages: 297 - 300

8. Kinetic-energy transport equation for the modeling of ballistic MOSFETs

   • Ting-Wei Tang
   • Parmijit. Samra

   OriginalPaper 13 December 2006 Pages: 301 - 304

9. Power·delay product in COSMOS logic circuits

   • Ahmad Al-Ahmadi
   • Savas Kaya

   OriginalPaper 24 January 2007 Pages: 305 - 309

10. Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

    • M. Aldegunde
    • A. J. García-Loureiro
    • A. Asenov

    OriginalPaper 09 December 2006 Pages: 311 - 314

11. Calibration of the Density-Gradient model by using the multidimensional effective-mass Schrödinger equation

    • Petru Andrei

    OriginalPaper 09 December 2006 Pages: 315 - 318

12. Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices

    • Yoshio Ashizawa
    • Ryo Tanabe
    • Hideki Oka

    OriginalPaper 09 December 2006 Pages: 319 - 322

13. Simulation of piezoresistivity effect in FETs

    • Matthias Auf der Maur
    • Michael Povolotskyi
    • Aldo Di Carlo

    OriginalPaper 09 December 2006 Pages: 323 - 326

14. Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias

    • D. N. Bentz
    • M. O. Bloomfield
    • T. S. Cale

    OriginalPaper 09 December 2006 Pages: 327 - 331

15. Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks

    • Andrew R. Brown
    • Jeremy R. Watling
    • Asen Asenov

    OriginalPaper 09 December 2006 Pages: 333 - 336

16. An evolution algorithm for noise modeling of HEMT’s down to cryogenic temperatures

    • Alina Caddemi
    • Francesco Catalfamo
    • Nicola Donato

    OriginalPaper 09 December 2006 Pages: 337 - 340

17. Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance

    • George P. Patsis
    • Vassilios Constantoudis
    • Evangelos Gogolides

    OriginalPaper 18 January 2007 Pages: 341 - 344

18. Transient TCAD simulation of three-stage organic ring oscillator

    • C. Erlen
    • P. Lugli
    • B. Nickel

    OriginalPaper 09 December 2006 Pages: 345 - 348

19. A novel framework for distributing computations DisPyTE – distributing Python tasks environment

    • Tim Fühner
    • Stephan Popp
    • Thomas Jung

    OriginalPaper 09 December 2006 Pages: 349 - 352

20. Efficient full-flow process simulation for 3D structures including stress modeling

    • Alp H. Gencer
    • Andrei Lebedev
    • Paul Pfäffli

    OriginalPaper 09 December 2006 Pages: 353 - 356

21. Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs

    • H. Ikarashi
    • K. Kitamura
    • K. Horio

    OriginalPaper 09 December 2006 Pages: 357 - 360

22. A drain current model for Schottky-barrier CNT-FETs

    • David Jiménez
    • Xavier Cartoixà
    • Stephan Roche

    OriginalPaper 09 December 2006 Pages: 361 - 364

23. A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

    • Yiming Li
    • Cheng-Kai Chen

    OriginalPaper 09 December 2006 Pages: 365 - 370

24. Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

    • Yiming Li

    OriginalPaper 09 December 2006 Pages: 371 - 376

25. Hot electron distribution function for the Boltzmann equation with analytic bands

    • Orazio Muscato

    OriginalPaper 09 December 2006 Pages: 377 - 380

26. Accurate extraction of maximum current densities from the layout

    • Albert Seidl
    • Thomas Schnattinger
    • Alexandr Petrashenko

    OriginalPaper 09 December 2006 Pages: 381 - 384

27. Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator

    • N. Seoane
    • A. J. García-Loureiro
    • A. Asenov

    OriginalPaper 09 December 2006 Pages: 385 - 388

28. Negative gate-overlap in nanoscaled DG-MOSFETs with asymmetric gate bias

    • Xue Shao
    • Zhiping Yu

    OriginalPaper 18 January 2007 Pages: 389 - 392

29. Human body model ESD simulation including self heating effect

    • T. Takani
    • T. Toyabe

    OriginalPaper 09 December 2006 Pages: 393 - 395

30. Quantum correction for DG MOSFETs

    • Martin Wagner
    • Markus Karner
    • Tibor Grasser

    OriginalPaper 18 January 2007 Pages: 397 - 400

31. Numerical analysis of a DAR IMPATT diode

    • Alexander M. Zemliak
    • Santiago Cabrera

    OriginalPaper 09 December 2006 Pages: 401 - 404

32. Particle-based simulation: An algorithmic perspective

    • Marco Saraniti
    • Shela Aboud
    • Stephen M. Goodnick

    OriginalPaper 09 December 2006 Pages: 405 - 410

33. A linear response Monte Carlo algorithm for inversion layers and magnetotransport

    • Christoph Jungemann
    • Anh-Tuan Pham
    • Bernd Meinerzhagen

    OriginalPaper 09 December 2006 Pages: 411 - 414

34. Global Modeling of high frequency devices

    • J. S. Ayubi-Moak
    • S. M. Goodnick
    • M. Saraniti

    OriginalPaper 09 December 2006 Pages: 415 - 418

35. Introducing energy broadening in semiclassical Monte Carlo simulations

    • Giulio Ferrari
    • A. Asenov
    • C. Jacoboni

    OriginalPaper 24 January 2007 Pages: 419 - 423

36. Schrödinger/Luttinger approach to scaled MOS transport for various crystal orientations and its experimental verifications

    • Takako Okada

    OriginalPaper 18 January 2007 Pages: 425 - 429

37. Joule heating and phonon transport in silicon MOSFETs

    • Zlatan Aksamija
    • Umberto Ravaioli

    OriginalPaper 18 January 2007 Pages: 431 - 434

38. Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

    • S. Krishnan
    • D. Vasileska
    • M. V. Fischetti

    OriginalPaper 18 January 2007 Pages: 435 - 438

39. Monte Carlo simulation of double gate MOSFET including multi sub-band description

    • J. Saint-Martin
    • A. Bournel
    • P. Dollfus

    OriginalPaper 09 December 2006 Pages: 439 - 442

40. An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs

    • Damien Querlioz
    • Philippe Dollfus
    • Van Lien Nguyen

    OriginalPaper 09 December 2006 Pages: 443 - 446

41. Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

    • Viktor Sverdlov
    • Tibor Grasser
    • Siegfried Selberherr

    OriginalPaper 09 December 2006 Pages: 447 - 450

42. Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon

    • Richard Akis
    • David Ferry

    OriginalPaper 18 January 2007 Pages: 451 - 454

43. Self-consistent ion transport simulation in carbon nanotube channels

    • Jan F. Eschermann
    • Yan Li
    • Umberto Ravaioli

    OriginalPaper 13 December 2006 Pages: 455 - 457

44. Meshless solution of the 3-D semiconductor Poisson equation

    • Zlatan Aksamija
    • Umberto Ravaioli

    OriginalPaper 18 January 2007 Pages: 459 - 462

45. Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-κ dielectric MOSFETS

    • J. R. Barker
    • J. R. Watling

    OriginalPaper 24 January 2007 Pages: 463 - 466

46. On a simple and accurate quantum correction for Monte Carlo simulation

    • F. M. Bufler
    • R. Hudé
    • A. Erlebach

    OriginalPaper 09 December 2006 Pages: 467 - 469

47. DSMC versus WENO-BTE: A double gate MOSFET example

    • Maria José Cáceres
    • José Antonio Carrillo
    • Chi-Wang Shu

    OriginalPaper 09 December 2006 Pages: 471 - 474

48. Wave-mixing effects on electronic noise in semiconductors

    • D. Persano Adorno
    • M. C. Capizzo
    • M. Zarcone

    OriginalPaper 18 January 2007 Pages: 475 - 477

49. Thermal noise in nanometric DG-MOSFET

    • P. Dollfus
    • A. Bournel
    • J. E. Velázquez

    OriginalPaper 18 January 2007 Pages: 479 - 482

50. Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors

    • Nicolas Faralli
    • Himanshu Markandeya
    • David K. Ferry

    OriginalPaper 09 December 2006 Pages: 483 - 486