Abstract
Schrödinger/Luttinger based approach to scaled MOS transport discussion has been first done for various kinds of crystal orientations, channel directions, applied voltages and mechanical stress together with experimental verifications. Typical output understandings through this work are as followed: (1) marked variations of inversion carrier distributions have been calculated among (110), (111), (120), (112) and (100) surfaces, (2) significant differences in channel conductivity of p-channel MOS have been simulated between triode and pentode regions, and (3) effective mass characteristics have been output as functions of germanium concentration.
Similar content being viewed by others
References
Luttinger, J.M., Kohn, W.: Phys. Rev. 97(4), 869 (1955)
Rodriguez, S., et al.: J. Appl. Phys. 86(1), 438 (1999)
Dijikstra, J.E., et al.: J. Appl. Phys. 81(3), 1259 (1997)
Himckley, J.M., et al.: Phys. Rev. B 41(5), 412912 (1990)
Fischetti, M.V., et al.: Phys. Rev. B 48(4), 2244 (1993)
Tiersten, M.: IBM J. Res. Dev. 5, 122 (1961)
Madarasz, F.L., et al.: Phys. Rev. B. 24(8), 244611 (1981)
Szmulowicz, F.: Phys. Rev. B 28(10), 285943 (1983)
Fischetti, M.V., et al.: J. Appl. Phys. 94(2), 1079 (2003)
Ohkawa, F.J., et al.: Prog. Theor. Phy. 57, 164 (1975)
Colman, D., et al.: J. Appl. Phys. 39, 1923 (1968)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Okada, T. Schrödinger/Luttinger approach to scaled MOS transport for various crystal orientations and its experimental verifications. J Comput Electron 5, 425–429 (2006). https://doi.org/10.1007/s10825-006-0027-4
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-006-0027-4