Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation Ch. AuerF. Schürrer OriginalPaper Pages: 5 - 14
A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface C. ErtlerF. Schürrer OriginalPaper Pages: 15 - 26
GaAs X-ray detector characterization through a 3D finite element model M. RizziM. MaurantonioB. Castagnolo OriginalPaper Pages: 27 - 34
From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters J. SéeP. DollfusP. Hesto OriginalPaper Pages: 35 - 48
Computer simulations and experimental study of retention of SONOS device D. FuksA. KivM. Gutman OriginalPaper Pages: 49 - 52
Numerical studies of stripline-typed photonic band-gap (PBG) structures using finite difference time domain (FDTD) method M. -S. TongR. SauleauY. Lu OriginalPaper Pages: 53 - 61