1. A first-principles investigation of electronic structure and ferromagnetic properties in alkali metal-doped ZnS/Se semiconductors

   • W. Adli
   • A. H. Belbachir

   OriginalPaper 02 July 2022 Pages: 1061 - 1069

   

2. Electronic, magnetic and thermoelectric properties of Nb-substituted Fe₂TiO₅ pseudobrookite compound: Ab initio study

   • Mahnaz Mohammadi
   • Esmaeil Pakizeh

   OriginalPaper 19 July 2022 Pages: 1070 - 1078

   

3. Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs_1-xN_x alloy

   • Ibtisam F. Al Maaitah
   • Elkenany B. Elkenany

   OriginalPaper Open access 09 August 2022 Pages: 1079 - 1087

   

4. Power-delay-product optimal repeater design for horizontal and vertical multilayer graphene nanoribbon interconnects

   • M. Sanaeepur
   • M. Momeni
   • A. Mahmoudi

   OriginalPaper 15 July 2022 Pages: 1088 - 1097

   

5. Ultrahigh on/off-current ratio γ-graphyne-1 nanotube-based sub-10-nm TFET modeling and simulation

   • Behrouz Rouzkhash
   • Alireza Salehi
   • Mohammad Taghi Ahmadi

   OriginalPaper 05 July 2022 Pages: 1098 - 1107

   

6. Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS₂ FETs

   • Ehsan Gholinataj-Jelodar
   • Alireza Aghanejad Ahmadchally
   • Morteza Gholipour

   OriginalPaper 25 July 2022 Pages: 1108 - 1115

   

7. Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

   • Senlin Kong
   • Jinxi Wei
   • Peng Ling

   OriginalPaper 16 July 2022 Pages: 1116 - 1126

   

8. Junctionless In_0.3Ga_0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications

   • Mahdi Vadizadeh
   • Mohammad Fallahnejad
   • Reyhaneh Ejlali

   OriginalPaper 01 August 2022 Pages: 1127 - 1137

   

9. Variable gain wideband LNA in 130 nm SiGe HBT technology with stepped impedance micro-strip open circuited stubs for minimum transmission phase variation for WiGig phased array receivers

   • S. Pournamy
   • Maran Ponnambalam

   OriginalPaper 27 July 2022 Pages: 1138 - 1149

   

10. Impact of process variation on the RF and stability performance of SiGe source-based epitaxial layer TFET

    • Radhe Gobinda Debnath
    • Srimanta Baishya

    OriginalPaper 01 August 2022 Pages: 1150 - 1162

    

11. Impacts of material parameters on breakdown voltage and location for power MOSFETs

    • Kunal Kumar
    • Chun-Hsiang Lo
    • Yeong-Her Wang

    OriginalPaper 25 July 2022 Pages: 1163 - 1165

    

12. Scattering characteristics of metal circular wire gratings in microwave and terahertz ranges

    • Vyacheslav V. Komarov

    OriginalPaper 14 July 2022 Pages: 1166 - 1173

    

13. A new strategy: A more valid determination of the nonlinear optical parameters for optoelectronic applications

    • Hosam M. Gomaa
    • I. S. Yahia

    OriginalPaper 16 July 2022 Pages: 1174 - 1179

    

14. Performance analysis of all optical-based quantum internet circuits

    • Amit Kumar Sharma
    • Ritu Sharma
    • Shishir Kumar Sharma

    OriginalPaper 09 August 2022 Pages: 1180 - 1188

    

15. Correction to: Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension

    • Philip Calado
    • Ilario Gelmetti
    • Piers R. F. Barnes

    Correction Open access 23 August 2022 Pages: 1189 - 1189