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Impacts of material parameters on breakdown voltage and location for power MOSFETs

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Abstract

To improve the electrical performance of power devices, materials used in fabrication need to be analyzed and optimized. By numerical simulations, we reveal that the breakdown voltage (BV) and location of a lateral diffused MOS power device simultaneously depend also on trench oxide permittivity. For a given device geometry, while the trench oxide permittivity with a certain value leads to a maximal BV, a smaller (larger) value causes electrical breakdown in the Si drift channel around the bottom (top) of the trench. This trend remains the same when Si is replaced by SiC. Our study implies that any by-product reducing the trench permittivity during trench filling should be avoided.

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Acknowledgements

This work is financially supported by the Young Scholar Fellowship Program from Ministry of Science and Technology, Taiwan, under Grant MOST 110-2636-E-006-004.

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Authors and Affiliations

  1. Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

    Kunal Kumar, Chun-Hsiang Lo, Chun-Chun Chang, Kuo-Hsing Kao & Yeong-Her Wang

  2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

    Tian-Li Wu

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  1. Kunal Kumar
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  2. Chun-Hsiang Lo
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Correspondence to Tian-Li Wu or Kuo-Hsing Kao.

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Kumar, K., Lo, CH., Chang, CC. et al. Impacts of material parameters on breakdown voltage and location for power MOSFETs. J Comput Electron 21, 1163–1165 (2022). https://doi.org/10.1007/s10825-022-01920-x

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