Compact model and circuit simulations for asymmetric, independent gate FinFETs Gajanan DessaiWeimin WuGennady Gildenblat OriginalPaper 28 September 2010 Pages: 103 - 107
Random variability modeling and its impact on scaled CMOS circuits Yun YeSamatha GummallaYu Cao OriginalPaper 27 October 2010 Pages: 108 - 113
Statistical analysis of hold time violations Lucas BrusamarelloGustavo NeubergerWilliam Walker OriginalPaper 16 October 2010 Pages: 114 - 121
Impact of RDF and RTS on the performance of SRAM cells Vinícius V. A. CamargoNabil AshrafGilson Wirth OriginalPaper 02 November 2010 Pages: 122 - 127
1/f Noise: threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps Nabil AshrafDragica Vasileska OriginalPaper 23 October 2010 Pages: 128 - 134
An advanced description of oxide traps in MOS transistors and its relation to DFT F. SchanovskyW. GösT. Grasser OriginalPaper 23 October 2010 Pages: 135 - 140
Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors Hugues MarinchioChristophe PalermoViktor Gružinskis OriginalPaper 21 October 2010 Pages: 141 - 145
Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique Alexander MakarovViktor SverdlovSiegfried Selberherr OriginalPaper 07 October 2010 Pages: 146 - 152
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion Sung-Min HongChristoph Jungemann OriginalPaper 20 October 2010 Pages: 153 - 159
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires Abhijeet PaulMathieu LuisierGerhard Klimeck OriginalPaper 23 October 2010 Pages: 160 - 172
Thermoelectric properties of silicon nanostructures Z. AksamijaI. Knezevic OriginalPaper 23 October 2010 Pages: 173 - 179
The role of the source and drain contacts on self-heating effect in nanowire transistors D. VasileskaA. HossainS. M. Goodnick OriginalPaper 12 November 2010 Pages: 180 - 186
Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs Andrew R. BrownJeremy R. WatlingAsen Asenov OriginalPaper 28 September 2010 Pages: 187 - 196
An effective potential approach to modeling 25 nm MOSFET devices S. AhmedC. RinghoferD. Vasileska OriginalPaper 21 October 2010 Pages: 197 - 200
Schrödinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering Leonard F. RegisterNingyu Shi OriginalPaper 16 October 2010 Pages: 201 - 205
Self-consistent Poisson-Schrödinger-Monte Carlo solver: electron mobility in silicon nanowires E. B. RamayyaI. Knezevic OriginalPaper 28 October 2010 Pages: 206 - 210
A semiclassical transport model for quantum cascade lasers based on the Pauli master equation G. MilovanovicH. Kosina OriginalPaper 15 October 2010 Pages: 211 - 217
Device modeling in the Wigner picture M. NedjalkovH. KosinaP. Schwaha OriginalPaper 06 October 2010 Pages: 218 - 223
Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation Damien QuerliozJérôme Saint-MartinPhilippe Dollfus OriginalPaper 14 October 2010 Pages: 224 - 231
Scattering matrix approach to direct solution of the Schrödinger equation R. AkisD. K. Ferry OriginalPaper 23 October 2010 Pages: 232 - 236
The non-equilibrium Green’s function method: an introduction P. VoglT. Kubis OriginalPaper 28 September 2010 Pages: 237 - 242
A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green function simulation of nano-devices John R. Barker OriginalPaper 08 October 2010 Pages: 243 - 251
Adaptive quadrature for sharply spiked integrands Samarth AgarwalMichael PovolotskyiGerhard Klimeck OriginalPaper 26 October 2010 Pages: 252 - 255
Application of the R-matrix method in quantum transport simulations Gennady Mil’nikovNobuya MoriYoshinari Kamakura OriginalPaper 14 October 2010 Pages: 256 - 261
Concurrent multiscale simulation of electronic devices M. Auf der MaurF. SacconiA. Di Carlo OriginalPaper 23 October 2010 Pages: 262 - 268