Skip to main content

The role of the source and drain contacts on self-heating effect in nanowire transistors

Journal of Computational Electronics volume 9, pages 180–186 (2010)Cite this article

Abstract

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for V G =V D =1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

£ 29.95

Price includes VAT (United Kingdom)

References

  1. Moore, G.E.: Cramming more components onto integrated circuits. Electronics 38, 19 (1965)

    Google Scholar 

  2. Mizuno, T., Okamura, J., Toriumi, A.: Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs. IEEE Trans. Electron Devices 41, 2216 (1994)

    Article  Google Scholar 

  3. Gross, W.J., Vasileska, D., Ferry, D.K.: A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations. IEEE Electron Device Lett. 20, 463 (1999)

    Article  Google Scholar 

  4. Welser, J., Hoyt, J.L., Takagi, S., Gibbons, J.F.: Strain dependence of the performance enhancement in strained-Si n-MOSFETs. In: IEDM Tech. Dig., p. 947 (1994)

    Google Scholar 

  5. Yan, R.-H., Ourmazd, A., Lee, K.F.: Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans. Electron Devices 39, 1704 (1992)

    Article  Google Scholar 

  6. Pop, E., Dutton, R., Goodson, K.: Monte Carlo simulation of Joule heating in bulk and strained silicon. Appl. Phys. Lett. 86, 082101 (2005)

    Article  Google Scholar 

  7. Pop, E.: Energy dissipation and transport in nanoscale devices. Nano Res. 3, 147 (2010)

    Article  Google Scholar 

  8. Raleva, K., Vasileska, D., Goodnick, S.M., Nedjalkov, M.: Modeling thermal effects in nanodevices. IEEE Trans. Electron Devices 55(6), 1306 (2008)

    Article  Google Scholar 

  9. Vasileska, D., Raleva, K., Goodnick, S.: Self-heating effects in nanoscale fd soi devices: the role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX. IEEE Trans. Electron Devices 56(12), 3064 (2009)

    Article  Google Scholar 

  10. Li, D., Wu, Y., Kim, P., Shi, L., Yang, P., Majumdar, A.: Thermal conductivity of individual silicon nanowires. Appl. Phys. Lett. 83, 2934 (2003)

    Article  Google Scholar 

  11. Asheghi, M., Lenug, Y.K., Wong, S.S., Goodson, K.E.: Phonon boundary scattering in thin silicon layers. Appl. Phys. Lett. 71(13), 29 (1997)

    Article  Google Scholar 

  12. Vasileska, D., Raleva, K., Goodnick, S.M.: Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity. IEEE Trans. Electron Devices 57, 726 (2010)

    Article  Google Scholar 

  13. Pop, E., Sinha, S., Goodson, K.E.: Heat generation and transport in nanometer scale transistors. Proc. IEEE 94, 1587 (2006)

    Article  Google Scholar 

  14. Balandin, A., Wang, K.L.: Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well. Phys. Rev. B 58, 1544 (1998)

    Article  Google Scholar 

  15. Vasileska, D., Hossain, A., Goodnick, S.M.: The role of the source and drain contacts on self-heating effect in nanowire transistors. ECS Transactions 31, 83–91 (2010)

    Article  Google Scholar 

  16. Kittel, C.: Introduction to Solid State Physics. Wiley, New York (2004)

    Google Scholar 

  17. Ziman, J.M.: Electrons and Phonons: The Theory of Transport Phenomena in Solids. Oxford Classic Texts in the Physical Sciences. Oxford University Press, London (1979)

    Google Scholar 

  18. Lai, J., Majumdar, A.: Concurrent thermal and electrical modeling of sub-micrometer silicon devices. J. Appl. Phys. 79, 7353 (1996)

    Article  Google Scholar 

  19. Raman, A., Walker, D.G., Fisher, T.S.: Simulation of nonequilibrium thermal effects in power LDMOS transistors. Solid-State Electron. 47, 1265 (2003)

    Article  Google Scholar 

  20. Selberherr, S.: Simulation of Semiconductor Devices and Processes. Springer, Berlin (1993)

    Google Scholar 

  21. Vasileska, D., Goodnick, S.M.: Computational Electronics. Morgan & Claypool, San Rafael (2006)

    Google Scholar 

  22. Ferry, D.K.: Semiconductor Transport. Taylor & Francis, London (2000)

    Google Scholar 

  23. Vasileska, D., Goodnick, S.M., Klimeck, G.: Computational Electronics: From Semi-Classical to Quantum Transport Modeling. Taylor & Francis, London (2010)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of ECEE, Arizona State University, Tempe, AZ, 85287-5706, USA

    D. Vasileska & S. M. Goodnick

  2. Intel Corp., Chandler, AZ, USA

    A. Hossain

  3. Department of EI, Univ. Sts. Cyril and Methodi, Skopje, 1000, Republic of Macedonia

    K. Raleva

Authors
  1. D. Vasileska
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Hossain
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Raleva
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. M. Goodnick
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Hossain.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Vasileska, D., Hossain, A., Raleva, K. et al. The role of the source and drain contacts on self-heating effect in nanowire transistors. J Comput Electron 9, 180–186 (2010). https://doi.org/10.1007/s10825-010-0334-7

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-010-0334-7

Keywords

  • Analytic bands MC device modeling