1. Room temperature carrier transport in graphene

   • R. S. Shishir
   • F. Chen
   • D. K. Ferry

   OriginalPaper 28 July 2009 Pages: 43 - 50

2. Probing quantum coherent states in bilayer graphene

   • M. J. Gilbert
   • J. Shumway

   OriginalPaper 23 September 2009 Pages: 51 - 59

3. Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

   • M. V. Fischetti
   • S. Jin
   • N. Sano

   OriginalPaper 23 July 2009 Pages: 60 - 77

4. A method for performing fully quantum mechanical simulations of gated silicon quantum wire structures

   • R. Akis
   • D. K. Ferry
   • M. J. Gilbert

   OriginalPaper 17 July 2009 Pages: 78 - 89

5. Silicon nanopores as bioelectronic devices: a simulation study

   • Alex Smolyanitsky
   • Marco Saraniti

   OriginalPaper 11 July 2009 Pages: 90 - 97

6. Simulation of charge transport in ion channels and nanopores with anisotropic permittivity

   • Reza Toghraee
   • R. Jay Mashl
   • Umberto Ravaioli

   OriginalPaper 30 June 2009 Pages: 98 - 109

7. Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

   • R. Kotlyar
   • M. D. Giles
   • M. Stettler

   OriginalPaper 16 September 2009 Pages: 110 - 123

8. Computational nanoelectronics research and education at nanoHUB.org

   • Benjamin P. Haley
   • Gerhard Klimeck
   • Diane L. Beaudoin

   OriginalPaper 15 July 2009 Pages: 124 - 131

9. Mathematical advances and horizons for classical and quantum-perturbed drift-diffusion systems: solid state devices and beyond

   • J. W. Jerome

   OriginalPaper 28 May 2009 Pages: 132 - 141

10. Recent developments in tight-binding approaches for nanowires

    • Timothy B. Boykin

    OriginalPaper 16 September 2009 Pages: 142 - 152

11. Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD

    • K. J. Willis
    • J. S. Ayubi-Moak
    • I. Knezevic

    OriginalPaper 12 August 2009 Pages: 153 - 171