Skip to main content

Computational nanoelectronics research and education at nanoHUB.org

Abstract

The simulation tools and resources available at nanoHUB.org offer significant opportunities for both research and education in computational nanoelectronics. Users can run simulations on existing powerful computational tools rather than developing yet another niche simulator. The worldwide visibility of nanoHUB provides tool authors with an unparalleled venue for publishing their tools. We have deployed a new quantum transport simulator, OMEN, a state-of-the-art research tool, as the engine driving two tools on nanoHUB.

The educational resources of nanoHUB are one of the most important aspects of the project, according to user surveys. New collections of tools into unified curricula have found a receptive audience in many university classrooms.

The underlying cyberinfrastructure of nanoHUB has been packaged as a generic software platform called HUBzero. The Rappture toolkit, which generates simulation GUIs, is part of HUBzero.

This is a preview of subscription content, access via your institution.

References

  1. http://nanohub.org/usage/

  2. http://nanohub.org/members/contributors/17286/usage

  3. Vasileska, D., Schroder, D.K., Ferry, D.K.: Scaled silicon mosfets: Part ii—degradation of the total gate capacitance. IEEE Trans. Electron Devices 44, 584–7 (1997)

    Article  Google Scholar 

  4. Vasileska, D., Ahmed, S.S., Mannino, M., Matsudaira, A., Klimeck, G., Lundstrom, M.: Schred (Feb. 2006). DOI:10254/nanohub-r221.3

  5. Klimeck, G., Oyafuso, F., Boykin, T.B., Bowen, R.C., von Allmen, P.: Development of a nanoelectronic 3-d (nemo 3-d) simulator for multimillion atom simulations and its application to alloyed quantum dots (invited). Comput. Model. Eng. Sci. (CMES) 3, 601–642 (2002)

    MATH  Google Scholar 

  6. Wang, J., Rahman, A., Klimeck, G., Lundstrom, M.: Bandstructure and orientation effects in ballistic Si and Ge nanowire fets. In: IEEE International Electron Devices Meeting (IEDM) Tech. Digest, pp. 537–540 (2005)

  7. Paul, A., Luisier, M., Neophytou, N., Kim, R., McLennan, M., Lundstrom, M., Klimeck, G.: Band structure lab (2006). DOI: 10254/nanohub-r1308.9

  8. Klimeck, G., Mannino, M., McLennan, M., Qiao, W., Ebert, D., Wang, X.: Quantum dot lab (Nov. 2005). DOI: 10254/nanohub-r450.6

  9. Wang, J., Polizzi, E., Lundstrom, M.: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. J. Appl. Phys. 96(4), 2192–2203 (2004)

    Article  Google Scholar 

  10. Wang, J., Polizzi, E., Heitzinger, C., Klimeck, G., Mehrotra, S.R., Haley, B.P.: Nanowire (May 2006). DOI: 10254/nanohub-r1307.4

  11. Slater, J.C., Koster, G.F.: Simplified lcao method for the periodic potential problem. Phys. Rev. 94, 1498–1524 (1954)

    MATH  Article  Google Scholar 

  12. Luisier, M., Klimeck, G., Schenk, A., Fichtner, W.: Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: from boundary conditions to strain calculations. Phys. Rev. B 74, 205323 (2006)

    Article  Google Scholar 

  13. Luisier, M., Schenk, A.: Atomistic simulation of nanowire transistors. J. Comput. Theor. Nanosci. 5, 1031–1045 (2008)

    Google Scholar 

  14. Luisier, M.: Full-band quantum transport in nanowire transistors. J. Comput. Electron. 7, 309–314 (2008)

    Article  Google Scholar 

  15. Luisier, M., Klimeck, G.: A multi-level parallel simulation approach to electron transport in nano-scale transistors. In: Proceedings of the 2008 ACM/IEEE Conference on Supercomputing (2008)

  16. Luisier, M., Schenk, A., Fichtner, W.: Three-dimensional full-band simulations of Si nanowire transistors. In: IEDM Tech. Digest 2006, p. 811 (2006)

  17. Luisier, M., Schenk, A., Fichtner, W.: Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations. Appl. Phys. Lett. 90, 102103 (2007)

    Article  Google Scholar 

  18. Luisier, M., Schenk, A., Fichtner, W.: Full-band atomistic study of source-to-drain tunneling in Si nanowire transistors. In: Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria, 2007

  19. Luisier, M., Klimeck, G.: Full-band and atomistic simulation of n- and p-doped double-gate mosfets for the 22 nm technology node. In: Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan, 2008

  20. Luisier, M., Klimeck, G.: Full-band and atomistic simulation of realistic 40 nm inas hemt. In: IEDM Tech. Digest 2008, pp. 887–890 (2008)

  21. Luisier, M., Klimeck, G.: Numerical strategies towards peta-scale simulations of nanoelectronic devices. Supercomputing (2009, submitted)

  22. Kim, S.G., Luisier, M., Haley, B.P., Paul, A., Mehrotra, S.R., Klimeck, G.: Omen nanowire (Dec. 2008). DOI: 10254/nanohub-r5359.4

  23. Bowen, C., Edwards, H., Chatterjee, T.: Texas instruments patent application 20090057651: Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and ldd implants

  24. DOI: 10254/nanohub-r5065.6

  25. DOI: 10254/nanohub-r5222.3

  26. DOI: 10254/nanohub-r5728.1

  27. DOI: 10254/nanohub-r5236.1

  28. http://rappture.org

  29. Klimeck, G., McLennan, M., Brophy, S., Adams III, G.B., Lundstrom, M.S.: nanohub.org: Advancing education and research in nanotechnology. Comput. Sci. Eng. 10, 17 (2008)

    Article  Google Scholar 

  30. http://hubzero.org

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Benjamin P. Haley.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Haley, B.P., Klimeck, G., Luisier, M. et al. Computational nanoelectronics research and education at nanoHUB.org. J Comput Electron 8, 124 (2009). https://doi.org/10.1007/s10825-009-0273-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s10825-009-0273-3

Keywords

  • Computational
  • Electronics
  • Nanoelectronics
  • Modeling
  • nanoHUB
  • nanoHUB.org
  • OMEN
  • Rappture
  • GUI