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Resistive switching characteristic of Ce0.9Y0.1O2/TiO2 bi-layer structure by photochemical metal-organic deposition

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Abstract

Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution for sneak current issue. Ce0.9Y0.1O2 material, possessing oxygen vacancies, was used as a potential barrier as well as oxygen reservoir which rectified the current of low resistance state without an electrical breakdown in 1S/1R device. TiO2 was adopted for resistive switching property, and TiO2 layer having mixed phase (anatase and brookite) showed typical diode switching behavior. The photochemical reaction of photochemical metal-organic deposition process and phase formation were monitored and established using by Fourier-transform infrared spectroscopy and X-ray diffraction, respectively. The 1S/1R device showed highly non-linear resistive switching characteristic, large on/off ratio of above three orders of magnitude with low operating current.

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Acknowledgements

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2019R1F1A1059637) and a 2019 Research Grant from Kangwon National University.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Kangwon National University, 1 Kangwondaehak-gil, Chuncheon, Gangwon, 24341, South Korea

    Sung-Eun Kim, Jin-Gyu Lee, In-Young Choi, Ha-Eun Kim & Hong-Sub Lee

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  1. Sung-Eun Kim
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  2. Jin-Gyu Lee
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Kim, SE., Lee, JG., Choi, IY. et al. Resistive switching characteristic of Ce0.9Y0.1O2/TiO2 bi-layer structure by photochemical metal-organic deposition. J. Korean Ceram. Soc. 57, 73–79 (2020). https://doi.org/10.1007/s43207-019-00006-y

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