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The electron transfer mechanism between metal and silicon oxide composites for triboelectric nanogenerators

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Abstract

We present the first-principles calculation to research the electron transfer mechanism between metal and silicon oxide composites for triboelectric nanogenerators. Compared to SiX (X = Cu, Ag, Au and Pt) interface and SiOX interface models, OX interface models have a larger interface separation work and are more stable. OX interface models also have a more significant charge density difference since the O atoms at the interface can store electrons transferred from the metal layer to the SiO2 layer. When Pt atoms and O-terminated SiO2 contact, the formed OPt interface models have a higher magnitude of charge rearrangement. Our calculations also suggest that OPt interface models have a higher electrostatic potential offset, smaller virtual oxide thinning thickness and higher electron potential barrier height. Therefore, the OPt interface models have a longer service life and a stronger ability to store friction-captured electrons.

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Acknowledgements

We thank for the helpful discussion with Prof. Pengfei Guan and the computational support from the Beijing Computational Science Research Center (CSRC).

Funding

This work was supported by the National Key Research and Development Program of China (No. 2021YFA0718801), the Fundamental Research Funds for the Central Universities (No. 2021XD-A04-2), the Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited (No. KLLDT202103) and the Open Project Program of Shandong Semiconductor Materials and Optoelectronic Information Technology Innovation Center, Ludong University.

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Authors and Affiliations

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Baonan Jia, Ming Lei, Yuanyuan Zou, Guoying Qin, Lihong Han, Qi Zhang & Pengfei Lu

  2. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Baonan Jia & Qi Zhang

  3. School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Ming Lei & Pengfei Lu

  4. College of Chemistry & Environmental Science, Hebei University, Baoding, 071002, China

    Chunfang Zhang

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  1. Baonan Jia
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  4. Guoying Qin
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Contributions

BN Jia took part in investigation; formal analysis; writing - original draft; writing - review & editing. Ming Lei involved in investigation; supervision; writing - review & editing. YY Zou and GY Qin involved in methodology; data curation; formal analysis. ZF Zhang took part in data curation and visualization. LH Han involved in investigation and funding acquisition. Q Zhang took part in investigation. PF Lu took part in conceptualization; funding acquisition; supervision; writing - review & editing. All authors read and approved the manuscript.

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Correspondence to Ming Lei or Pengfei Lu.

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Jia, B., Lei, M., Zou, Y. et al. The electron transfer mechanism between metal and silicon oxide composites for triboelectric nanogenerators. Adv Compos Hybrid Mater 5, 3223–3231 (2022). https://doi.org/10.1007/s42114-022-00561-9

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