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Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

非对称Fabry-Perot腔增强单层二硫化钼光电探测器

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Abstract

Two-dimensional (2D) materials have attracted significant attention as a promising candidate for electronic and optoelectronic devices. However, low absorption impairs the performance of few-layer 2D material-based photodetectors (PDs). Herein, we purpose an asymmetric Fabry-Perot cavity consisting of a dielectric layer and metallic film to enhance the interactions between light and monolayer molybdenum disulfide (MoS2). The external quantum efficiency of the monolayer MoS2 heterojunction PD is enhanced by more than two orders of magnitude via optimizing the thickness of the dielectric layer. The monolayer-MoS2/nickel oxide heterojunction PD exhibits a large on/off ratio of 2 × 105, a responsivity of 703 A W−1, and an ultrahigh detectivity of 1.31 × 1015 Jones. The detectivity is the best value ever reported for monolayer-MoS2 heterojunction PDs. Our results may pave the way for high-performance 2D material-based PDs.

摘要

二维材料在柔性光电器件方面具有广泛的应用前景, 引起了研究人员的极大兴趣. 然而, 对于原子层厚度的二维材料来说, 低吸收效率限制了其光电探测性能的改善. 对此, 我们提出了一种利用非对称Fabry-Perot腔增强二维材料吸收效率的方法, 该结构由金属和介质层构成. 通过优化介质层厚度, 可以调控发生多光束干涉相消的波长, 使其与二维材料吸收相匹配, 从而改善二维材料的吸收效率, 并将单层二硫化钼探测器的外量子效率提高了两个数量级. 此外, 该探测器具有1.31 × 1015 Jones的超高探测率, 为已报道的单层二硫化钼异质结探测器中的最高值. 本工作为制备高性能二维材料探测器提供了一条有效 途径.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (11674290, U1704138, 61804136, U1804155 and 11974317), Henan Science Fund for Distinguished Young Scholars (212300410020), the Key Project of Henan Higher Education (21A140001), Zhengzhou University Physics Discipline Improvement Program and China Postdoctoral Science Foundation (2018M630829 and 2019T120630).

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Authors and Affiliations

  1. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China

    Xuexia Chen  (陈雪霞), Jinhao Zang  (臧金浩), Xun Yang  (杨珣), Yuan Zhang  (张元), Yancheng Chen  (陈彦成), Yue Zhao  (赵越), Lin Dong  (董林) & Chong-Xin Shan  (单崇新)

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  1. Xuexia Chen  (陈雪霞)
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  2. Jinhao Zang  (臧金浩)
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  3. Xun Yang  (杨珣)
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  4. Yuan Zhang  (张元)
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  5. Yancheng Chen  (陈彦成)
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  6. Yue Zhao  (赵越)
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  7. Lin Dong  (董林)
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  8. Chong-Xin Shan  (单崇新)
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Contributions

Author contributions Yang X, Dong L, and Shan CX proposed and guided the project. Chen X designed and conducted the experiments. Zhang Y and Zang J performed the theoretical calculation and SEM measurement, respectively. Chen Y and Zhao Y performed the response spectra measurement. Chen X wrote the paper. All the authors participated in discussions and approved the manuscript.

Corresponding authors

Correspondence to Xun Yang  (杨珣), Lin Dong  (董林) or Chong-Xin Shan  (单崇新).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Xuexia Chen received her BSc and MSc degrees in physics from Zhengzhou University in 2015 and 2017, respectively. She is studying for her PhD degree at Zhengzhu University under the supervision of Prof. Lin Dong. Her study focuses on the controllable synthesis of 2D materials, and their applications in optoelectronics.

Xun Yang received his BSc degree in physics from the University of Science and Technology of China (USTC) in 2012, and PhD degree in condensed matter physics from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (CAS) under the supervision of Prof. Chongxin Shan in 2017. Afterwards he joined Zhengzhou University in 2017. He is currently an associate professor at the School of Physics & Microelectronics, Zhengzhou University. His research interest focuses on wide-bandgap semiconductors.

Lin Dong received his BSc (1998) and MSc (2001) degrees in chemistry from Jilin University, and PhD degree (2005) in condensed matter physics from Changchun Institute of Optics, Fine Mechanics and Physics, CAS. He joined Zhengzhou University in 2005. He is currently a professor at the School of Physics & Microelectronics, Zhengzhou University. His research interest mainly focuses on mechanoluminescence and piezotronic/piezophototronic derived nanomaterials and devices.

Chong-Xin Shan is a professor of Zhengzhou University. He received his BSc degree from Wuhan University in 1999, and PhD degree from Changchun Institute of Optics, Fine Mechanics and Physics, CAS in 2004. His current research focuses on semiconductor optoelectronic materials and devices. He is supported by the National Natural Science Fund for the Distinguished Young Scholars, Distinguished professor of Changjiang Scholars, etc.

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Chen, X., Zang, J., Yang, X. et al. Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity. Sci. China Mater. 65, 1861–1868 (2022). https://doi.org/10.1007/s40843-021-1955-0

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